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首页> 外文期刊>RSC Advances >Photoelectrochemical manifestation of intrinsic photoelectron transport properties of vertically aligned {001} faceted single crystal TiO2 nanosheet films
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Photoelectrochemical manifestation of intrinsic photoelectron transport properties of vertically aligned {001} faceted single crystal TiO2 nanosheet films

机译：垂直排列的{001}多面单晶TiO2纳米片薄膜的内在光电子传输特性的光电化学表现

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摘要

In this work, vertically aligned anatase TiO2 single crystal nanosheets with laterally exposed {001} facets onto a conducting FTO substrate (VATN) were successfully synthesised using hydrofluoric acid (40 wt%) as a crystal facet controlling agent by a simple hydrothermal method. The as-synthesised VATN without calcination exhibited a good crystalline structure, and was used as a photoanode showing superior photoelectrocatalytic activity toward water oxidation under UV irradiation. After thermal treatment at 550 degrees C for 2 h, the photoelectrocatalytic activity of the VATN photoanode was almost 2.6 times that for unsintered VATN under the same experimental conditions, which could be mainly due to the surface passivation role of surface fluorine in unsintered VATN to decrease the photoelectrocatalytic activity. A photoelectrochemical method was used to manifest the photoelectron transport properties inside VATN photoanodes and concurrently quantify the inherent resistances (R-0) of UV illuminated photoanodes before and after calcination. The results demonstrated that the determined R-0 values were respectively 155 Omega and 66 Omega for VATN photoanodes before and after calcination, inversely proportional to their photoelectrocatalytic activities. Compared to VATN before calcination, a significantly decreased R-0 value of VATN after calcination further confirmed the presence of surface fluorine in VATN unfavorable for photoelectron transport inside a photocatalyst film. This work provided direct evidence to prove the intrinsic photoelectron transport properties of {001} faceted anatase TiO2 nanosheet array film photoanodes in the presence and absence of surface fluorine.
机译：在这项工作中，通过简单的水热法成功地使用氢氟酸（40 wt％）作为晶体刻面控制剂，成功合成了侧向暴露的{001}刻面在导电FTO基板（VATN）上的垂直取向的锐钛矿型TiO2单晶纳米片。刚合成的未煅烧的VATN表现出良好的晶体结构，并用作光阳极，在紫外线照射下对水氧化具有优异的光电催化活性。在相同的实验条件下，在550摄氏度下热处理2小时，VATN光阳极的光电催化活性几乎是未烧结VATN的2.6倍，这可能主要是由于未烧结VATN中表面氟的表面钝化作用降低了光电催化活性。使用光电化学方法来显示VATN光阳极内部的光电子传输特性，并同时量化煅烧前后UV照射的光阳极的固有电阻（R-0）。结果表明，在煅烧前后，VATN光阳极测定的R-0值分别为155Ω和66Ω，与它们的光电催化活性成反比。与煅烧前的VATN相比，煅烧后的VATN的R-0值显着降低，进一步证实了VATN中存在表面氟，这不利于光催化剂膜内的光电子传输。这项工作提供了直接的证据，以证明在存在和不存在表面氟的情况下，{001}多面锐钛矿型TiO2纳米片阵列膜光阳极的固有光电子传输特性。

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