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Adsorption of polyethylenimine and its interaction with a genomic DNA on a silicon oxynitride surface characterized by dual polarization interferometry

机译:聚乙烯亚胺的吸附及其与基因组DNA在氮氧化硅表面上的相互作用,其特征为双极化干涉法

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Dual polarization interferometry was used to investigate the adsorption of polyethylenimine (PEI) on a silicon oxynitride chip surface, as well as to study the subsequent interaction between PEI and a genomic DNA. A compact homogeneous PEI layer formed initially as a result of their strong electrostatic attraction to the negatively charged chip surface. With the adsorption going on, a short time adsorption process with constant speed was observed and the subsequent PEI molecules loosely attached on the chip surface because of the electrostatic repulsion and crowded surface conditions. A loose and thick DNA layer formed on the PEI surface due to its rigidity. Further PEI deposition induced DNA conformation changes and the swelling of the PEI-DNA complex layer, which resulted in a dramatic layer thickness increase. Under high PEI concentration, the layer mass and thickness increments were partially lost as DNA was stripped off by PEI molecules. This result was interpreted in terms of overcharged DNA-PEI complex formation and the strong electrostatic repulsion between the first PEI layer and the newly formed overcharged DNA-PEI complexes. The explanation was proved by the case of the assembly process in PBS. No stripping effect was found even at a high PEI concentration in PBS because of the salt screening effect and the low charge density of PEI.
机译:双极化干涉法用于研究聚乙烯亚胺(PEI)在氮氧化硅芯片表面的吸附,以及研究PEI与基因组DNA之间的后续相互作用。由于它们对带负电的芯片表面的强静电吸引力,最初形成了紧凑的均匀PEI层。随着吸附的进行,观察到短时间的匀速吸附过程,随后的PEI分子由于静电排斥和拥挤的表面条件而松散地附着在芯片表面上。由于其刚性,在PEI表面上形成了一个松散而厚的DNA层。进一步的PEI沉积引起DNA构象变化以及PEI-DNA复合物层膨胀,从而导致层厚显着增加。在高PEI浓度下,由于PEI分子剥离了DNA,因此部分失去了层质量和厚度增量。根据过度充电的DNA-PEI复合物的形成以及第一PEI层与新形成的过度充电的DNA-PEI复合物之间的强静电排斥来解释此结果。 PBS中组装过程的情况证明了这一解释。由于盐筛选作用和PEI的低电荷密度,即使在PBS中的PEI浓度高时也没有发现剥离作用。

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