Scalable syntheses of two-dimensional topological insulators are critical to material exploration. We demonstrate a controlled assembly of a two-dimensional V-VI group compound, Sb2Te3 nanoplates (NPs), through a vapor-solid growth process. The physical thickness of Sb2Te3 NPs can be rationally controlled in a wide range, from hundreds of nm down to sub-10 nm. Single-quintuple-layer Sb2Te3 NPs were obtained, with a high domain density of similar to 2.465 x 10(8) cm(-2) over a large surface area (1 cm x 1 cm) of a SiO2/Si substrate, verifying a scalable synthesis method. Extensive material analyses were conducted to explore the basic properties of Sb2Te3 NPs using SEM and AFM, etc. HRTEM analysis confirms that the NP samples exhibit a highly crystalline structure and XPS analysis confirms the chemical composition and material stoichiometry. The growth of 2D topological insulator nanostructures may open up new opportunities in surface-state studies and potential applications in low-dissipative electronic systems.
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机译：二维拓扑绝缘体的可扩展合成对于材料探索至关重要。我们展示了通过汽固生长过程的二维V-VI组化合物，Sb2Te3纳米板（NPs）的受控组装。 Sb2Te3 NP的物理厚度可以合理控制在数百纳米到10纳米以下的宽范围内。获得了单层五层Sb2Te3 NP，在SiO2 / Si基板的大表面积（1 cm x 1 cm）上具有类似于2.465 x 10（8）cm（-2）的高畴密度，验证了可扩展的合成方法。进行了广泛的材料分析，以使用SEM和AFM等方法探索Sb2Te3 NP的基本特性。HRTEM分析证实了NP样品显示出高度的晶体结构，XPS分析证实了化学成分和材料的化学计量。二维拓扑绝缘体纳米结构的增长可能为表面状态研究和低耗散电子系统的潜在应用提供新的机会。
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