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Nanosize alpha-Bi2O3 decorated Bi2MoO6 via an alkali etching process for enhanced photocatalytic performance

机译:纳米级α-Bi2O3通过碱蚀刻工艺修饰的Bi2MoO6,可增强光催化性能

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摘要

Bi2MoO6/Bi2O3 heterojunction photocatalysts were synthesized through a facile alkali etching method and their photocatalytic activity was evaluated by photodegradation of Rhodamine B (RhB) under visible-light irradiation. The photocatalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM)/transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and UV-visible diffuse reflectance spectroscopy. XRD, TEM and XPS results confirm that the Bi2MoO6/Bi2O3 heterojunctions were formed after the alkali etching process. The photocatalytic activity can be easily controlled by adjusting the etching time and the highest visible-light-responsive photocatalytic performance was observed on Bi2MoO6/Bi2O3 composite that was etched in 0.1 M NaOH for 45 min. Moreover, the mechanistic study suggested that the photoinduced holes played a major role for the RhB degradation and the photocurrent tests confirmed that the effective electron-hole separation on the interface of the p-n junction promotes the photocatalytic process.
机译:通过一种简便的碱刻蚀方法合成了Bi2MoO6 / Bi2O3异质结光催化剂,并通过在可见光照射下若丹明B(RhB)的光降解来评估其光催化活性。通过X射线衍射(XRD),扫描电子显微镜(SEM)/透射电子显微镜(TEM),X射线光电子能谱(XPS)和UV-可见漫反射光谱来表征光催化剂。 XRD,TEM和XPS结果证实在碱腐蚀工艺后形成了Bi2MoO6 / Bi2O3异质结。通过调节蚀刻时间可以轻松控制光催化活性,在0.1M NaOH中蚀刻45分钟的Bi2MoO6 / Bi2O3复合材料上观察到了最高的可见光响应光催化性能。此外,机理研究表明,光致空穴在RhB降解中起主要作用,光电流测试证实在p-n结界面上有效的电子-空穴分离促进了光催化过程。

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