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Role of multivalent Cu, oxygen vacancies and CuO nanophase in the ferromagnetic properties of ZnO:Cu thin films

机译：多价铜，氧空位和纳米CuO在ZnO：Cu薄膜铁磁性能中的作用

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摘要

Comprehensive microstructural, electronic and magnetic analyses have been carried out on ZnO:Cu thin films grown by pulsed laser deposition on c-plane sapphire under different oxygen partial pressures. Detailed X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) analyses reveal that increase in oxygen growth pressure degrades the epitaxy of ZnO:Cu thin films due to inclusion of nanosize CuO in the ZnO host lattice. HRTEM and magnetization studies suggest that thin film quality plays a less effective role in governing the magnetic properties of these samples. Instead, room temperature ferromagnetism (FM) of these ZnO:Cu thin film samples are highly tunable by the simultaneous presence of CuO nanophases and multivalent Cu and V-O concentrations, which are in strong contest with each other. For low oxygen partial pressure grown sample, the effective Cu2+ - V-O - Cu1+ network is the main contributor to the observed FM and is in competition with CuO nanophases only when there is a relatively low V-O concentration with a dominant Cu2+ oxidation state. For vacuum grown samples containing high V-O concentration and Cu1+ as dominant oxidation state, the Cu2+ - V-O - Cu1+ network becomes less effective and a CuO nanophase (4-5 nm) is the dominent FM supplier. The extrinsic FM in the vacuum grown sample, which is the best epitaxial quality sample, is further confirmed by the zero field cooled (ZFC) and field cooled (FC) magnetization protocols.
机译：已经对在不同氧分压下在c面蓝宝石上脉冲激光沉积生长的ZnO：Cu薄膜进行了全面的微结构，电子和磁性分析。详细的X射线衍射（XRD），X射线光电子能谱（XPS）和高分辨率透射电子显微镜（HRTEM）分析表明，氧气生长压力的增加会由于ZnO：Cu薄膜中包含纳米级CuO而降低外延性。 ZnO主晶格。 HRTEM和磁化研究表明，薄膜质量在控制这些样品的磁性能方面起的作用较小。取而代之的是，这些ZnO：Cu薄膜样品的室温铁磁性（FM）可以通过同时存在CuO纳米相和多价Cu和V-O浓度而高度可调，这是相互竞争激烈的。对于低氧分压生长的样品，有效的Cu2 +-V-O-Cu1 +网络是观察到的FM的主要贡献者，并且仅当存在相对较低的V-O浓度且具有主要的Cu2 +氧化态时才与CuO纳米相竞争。对于包含高V-O浓度和Cu1 +作为主要氧化态的真空生长样品，Cu2 +-V-O-Cu1 +网络的有效性降低，而FMO供应商是CuO纳米相（4-5 nm）。零磁场冷却（ZFC）和磁场冷却（FC）磁化方案进一步证实了真空生长样品中的外在FM是最好的外延质量样品。

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