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首页> 外文期刊>RSC Advances >Hybridization of PDMS based cyanate ester and DGEBA for radiation resistant and microelectronics applications
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Hybridization of PDMS based cyanate ester and DGEBA for radiation resistant and microelectronics applications

机译：PDMS基氰酸酯和DGEBA的杂交，用于抗辐射和微电子应用

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摘要

Cyanate ester terminated polydimethylsiloxane (PDMS-OCN) was synthesized and is copolymerized with DGEBA (1 : 1 and 2 : 1 ratios) through the formation of oxazoline ring to obtain a thermally stable and flexible hybrid PDMS-DGEBA polymer matrix. Subsequently, the radiation resistant behavior of PDMS-DGEBA is studied by a UV treatment process. UV irradiated PDMS-DGEBA films possess an excellent radiation resistance due to the formation of a passive silica layer on the surface of the sample, which effectively protects the materials from UV rays. The silica layer formation was confirmed by scanning electron microscopy (SEM) images. Moreover, X-ray photoelectron spectroscopy (XPS) analysis of PDMS-DGEBA also supports the increasing percentage of silica content after the irradiation of UV rays. Furthermore, the lower values of dielectric constant and dielectric loss, higher thermal stability and excellent radiation resistant properties of PDMS-DGEBA confirm that it can be used as an effective interlayer for low k dielectrics as an insulatingmaterial in ultra large scale integrated circuitry (ULSIC) devices.
机译：合成了氰酸酯封端的聚二甲基硅氧烷（PDMS-OCN），并通过恶唑啉环的形成与DGEBA（1：1和2：1的比例）共聚，从而获得了热稳定且柔性的杂化PDMS-DGEBA聚合物基质。随后，通过紫外线处理工艺研究了PDMS-DGEBA的抗辐射性能。紫外线辐射的PDMS-DGEBA膜由于在样品表面上形成了被动二氧化硅层，因此具有极好的抗辐射性，从而有效地保护了材料免受紫外线的伤害。通过扫描电子显微镜（SEM）图像确认二氧化硅层的形成。此外，PDMS-DGEBA的X射线光电子能谱（XPS）分析也支持紫外线照射后二氧化硅含量的增加。此外，PDMS-DGEBA的介电常数和介电损耗值较低，较高的热稳定性和出色的抗辐射性能证明，它可用作低k电介质的有效中间层，可作为超大规模集成电路（ULSIC）中的绝缘材料设备。

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