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n-Type KCu3S2 microbelts: optical, electrical, and optoelectronic properties

机译：n型KCu3S2微带：光学，电气和光电特性

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摘要

KCu3S2 microbelts with lengths up to 80 mm and widths of 200-800 nm have been synthesized using a composite-hydroxide mediated (CHM) approach and their optical, electrical and optoelectronic properties were systematically characterized for the first time. As-synthesized KCu3S2 microbelts were characterized to be semiconductors with a bandgap of 1.64 eV by UV-vis absorption spectroscopy and room-temperature PL spectroscopy. Ultraviolet photoelectron spectroscopy (UPS) and the electrical transport properties of the bottom-gate field-effect transistor (FET) revealed the n-type conduction of the KCu3S2 microbelts with a conductivity as high as similar to 1.85 x 10(3) S cm(-1). A KCu3S2/Au Schottky diode was fabricated, which showed a turn-on voltage of similar to 0.3 V, a rectification ratio of similar to 10(2) to 10(3), and an ideality factor of 2.1. The diode possessed a photoresponse ratio Ilight/Idark similar to 50 and a rapid response time less than 0.5 s. The systematical electrical characterization of KCu3S2 microbelts sheds light on the potential application of KCu3S2 as a photovoltaic or optoelectronic material.
机译：使用复合氢氧化物介导（CHM）方法合成了长度最长为80 mm，宽度为200-800 nm的KCu3S2微带，并首次系统地表征了它们的光学，电学和光电性能。合成后的KCu3S2微带通过紫外可见吸收光谱和室温PL光谱表征为带隙为1.64 eV的半导体。紫外光电子能谱（UPS）和底栅场效应晶体管（FET）的电传输特性显示出KCu3S2微带的n型传导，其电导率高达1.85 x 10（3）S cm（ -1）。制作了KCu3S2 / Au肖特基二极管，其显示的开启电压类似于0.3 V，整流比类似于10（2）至10（3），理想因子为2.1。二极管的光响应比Ilight / Idark接近50，快速响应时间小于0.5 s。 KCu3S2微带的系统电气特性为KCu3S2作为光伏或光电材料的潜在应用提供了启示。

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