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首页> 外文期刊>RSC Advances >An all solution-based process for the fabrication of superstrate-type configuration CuInS2 thin film solar cells
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An all solution-based process for the fabrication of superstrate-type configuration CuInS2 thin film solar cells

机译：基于溶液的全过程制造上覆式结构CuInS2薄膜太阳能电池

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CuInS2 (CIS) thin films have proven to be promising candidates for photovoltaic technology but still the cost and safety of their fabrication processes remain challenging topics for research and development. Our efforts are based on avoiding the costly vacuum-based deposition methods that use selenization and high temperature processes. A cadmium free cell structure hglass/FTO/TiO2/In2S3/CIS/carboni was fabricated using a CuInS2 nanocrystal ink at low temperature without selenization or sulfurization steps. All processes used have been non-vacuum and solution based. To form a stable ink, surfactant and binder-free monodispersed CIS nanocrystals were synthesized via a hot injection method in ethylene glycol solvent and re-dispersed in DMF. A spray pyrolysis method was used for the deposition of TiO2 and In2S3 as blocking and buffer layers, respectively. A doctor blade method was used to coat CIS films on the buffer layer. The final CIS absorber layer was achieved after heat treatments at 150 and 250 degrees C, without a selenization process. The amount of carbon residue in the final CIS film was very low (similar to 3%). Effective parameters on photovoltaic performance including the type of sulfur source, buffer-layer thickness and CIS grain size and morphology were optimized. The optimum superstrate-type solar cell device showed promising power efficiency of up to 3%.
机译：CuInS2（CIS）薄膜已被证明是光伏技术的有前途的候选者，但其制造工艺的成本和安全性仍然是研发的挑战性课题。我们的努力基于避免使用硒化和高温工艺的昂贵的基于真空的沉积方法。使用CuInS2纳米晶体墨水在低温下无硒化或硫化步骤制备了无镉的hglass / FTO / TiO2 / In2S3 / CIS / carboni无孔结构。使用的所有过程都不是基于真空和解决方案的。为了形成稳定的油墨，通过热注射法在乙二醇溶剂中合成了表面活性剂和无粘合剂的单分散CIS纳米晶体，然后将其重新分散在DMF中。喷涂热解法分别用于沉积TiO2和In2S3作为阻挡层和缓冲层。使用刮刀法将CIS膜涂覆在缓冲层上。最终的CIS吸收剂层是在150和250摄氏度的热处理条件下完成的，没有进行硒化处理。最终CIS膜中的碳残留量非常低（大约3％）。优化了光伏性能的有效参数，包括硫源类型，缓冲层厚度以及CIS晶粒尺寸和形态。最佳的覆膜型太阳能电池器件显示出有希望的高达3％的功率效率。

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