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Sequential solvent casting for improving the structural ordering and electrical characteristics of polythiophene thin films

机译:顺序溶剂浇铸可改善聚噻吩薄膜的结构有序性和电性能

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摘要

We developed a facile post-deposition method for preparing high-performance organic transistors using direct solvent exposure. The morphological, optical, and electrical properties of poly(3-hexylthiophene) (P3HT) films were profoundly influenced by the solubility of P3HT in a solvent. Exposure to an optimized binary solvent mixture comprising methylene chloride and toluene efficiently improved the morphology and molecular ordering in a conjugated polymer thin film. The improved ordering was correlated with improved charge carrier transport in the field-effect transistors (FETs) prepared from the films. The correlation between the thin films' structural features and the electrical properties of the films guided the identification of an appropriate binary solvent mixing ratio and characterized the influence of the physical properties on the electronic properties of solvent-exposed P3HT films in an FET.
机译:我们开发了一种简便的后沉积方法,可通过直接溶剂暴露来制备高性能有机晶体管。聚(3-己基噻吩)(P3HT)膜的形态,光学和电学性质受到P3HT在溶剂中的溶解度的影响。暴露于包含二氯甲烷和甲苯的优化的二元溶剂混合物中,可以有效改善共轭聚合物薄膜的形态和分子有序性。改善的有序性与改善的由薄膜制备的场效应晶体管(FET)中的载流子传输相关。薄膜的结构特征与薄膜的电性能之间的相关性指导了对合适的二元溶剂混合比的识别,并表征了物理性能对FET中溶剂暴露的P3HT薄膜的电子性能的影响。

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