首页> 外文期刊>RSC Advances >Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S, Se)(2) solar cell
【24h】

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S, Se)(2) solar cell

机译:CuIn(S,Se)(2)太阳能电池CdS / ZnO层中电荷复合的光物理研究

获取原文
获取原文并翻译 | 示例
           

摘要

Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S, Se)(2) solar cell devices, in the range of 330-1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump-probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.
机译:在CuIn(S,Se)(2)太阳能电池设备上测量了与激发波长相关的飞秒瞬态光电流,范围为330-1300 nm。在450 nm以下的波长激发下,CdS / ZnO层中的电荷复合被确定为导致更长的衰减和更低的EQE。飞秒泵浦探针测量还支持CdS / ZnO层中的电荷转移和复合。通过选择合适的缓冲层,这些测量将有助于设计高效CISSe太阳能电池。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号