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首页> 外文期刊>RSC Advances >Enhanced electrical properties in ferroelectric thin films on conductive Au-LaNiO3 nanocomposite electrodes via modulation of Schottky potential barrier
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Enhanced electrical properties in ferroelectric thin films on conductive Au-LaNiO3 nanocomposite electrodes via modulation of Schottky potential barrier

机译：通过调制肖特基势垒增强导电Au-LaNiO3纳米复合电极上铁电薄膜的电性能

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摘要

Metal-conductive oxide nanocomposite thin films are regarded as promising electrodes for ferroelectric devices to overcome the intrinsic drawbacks of conventional metal or conductive oxides electrodes. In this work, ferroelectric Pb(Zr,Ti)O-3 (PZT) thin films with a thickness of 240 nm were deposited on metal-conductive oxide nanocomposite Au-LaNiO3 (Au-LNO) electrodes by a sol-gel method, and their microstructure and ferroelectric properties were investigated. It was observed that the PZT thin films fabricated on the Au-LNO bottom electrode exhibited enhanced ferroelectricity with the remnant polarization as high as 59.6 mu C cm(-2), which was much larger than those on the Pt (20 mu C cm(-2)) and the LNO (33 mu C cm(-2)) bottom electrodes. The J-V characteristics fitted by the Schottky emission model revealed the lowest potential barrier height at the interface between the PZT thin film and the Au-LNO electrode. The low potential barrier height contributed to a thin spacing charge layer at the PZT/Au-LNO interface, which was beneficial to the switching of ferroelectric domains. Ultraviolet photoelectron spectroscopy (UPS) results revealed that the decrease of the Schottky potential barrier was understood by the different work functions of the bottom electrodes according to the semiconductor theory. The present work demonstrates that metal-oxide nanocomposite electrodes can effectively improve the electrical properties of ferroelectric films by modulation of the Schottky potential barrier height. In particular, the modulation of the Schottky potential barrier by using nanocomposite electrodes also provides meaningful guidance for designing high performance ferroelectric photovoltaic devices.
机译：金属导电氧化物纳米复合薄膜被认为是用于铁电器件的有希望的电极，以克服常规金属或导电氧化物电极的固有缺点。在这项工作中，通过溶胶-凝胶法在金属导电氧化物纳米复合Au-LaNiO3（Au-LNO）电极上沉积厚度为240 nm的铁电Pb（Zr，Ti）O-3（PZT）薄膜，并研究了它们的微观结构和铁电性能。观察到，在Au-LNO底部电极上制备的PZT薄膜显示出增强的铁电性，剩余极化高达59.6μC cm（-2），远大于在Pt（20μC cm（-2） -2））和LNO（33μC cm（-2））底部电极。肖特基发射模型拟合的J-V特性揭示了在PZT薄膜和Au-LNO电极之间的界面处的最低势垒高度。低的势垒高度有助于PZT / Au-LNO界面处的薄间隔电荷层，这有利于铁电畴的切换。紫外光电子能谱（UPS）结果表明，根据半导体理论，底部电极的不同功函可以理解肖特基势垒的减小。本工作表明，金属氧化物纳米复合电极可以通过调节肖特基势垒高度来有效地改善铁电薄膜的电性能。特别地，通过使用纳米复合电极对肖特基势垒的调制也为设计高性能铁电光伏器件提供了有意义的指导。

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