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首页> 外文期刊>RSC Advances >Influence of Mn dopants on the structure and multiferroic properties of a Bi0.90Ho0.10FeO3 thin film
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Influence of Mn dopants on the structure and multiferroic properties of a Bi0.90Ho0.10FeO3 thin film

机译：Mn掺杂对Bi0.90Ho0.10FeO3薄膜结构和多铁性的影响

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摘要

Mn substituted Bi0.90Ho0.10FeO3 (BHFO) thin films having the compositions Bi0.90Ho0.10Fe1-xMnxO3 (BHFMO) (x = 0, 0.01, 0.03, 0.05) were synthesized via chemical solution deposition. The influence of the Mn dopants on the structure and multiferroic properties of the Bi0.90Ho0.10FeO3 thin film is systematically investigated. X-ray diffraction, Rietveld refinement and Raman spectra analysis reveal that the crystal structure of the BHFMO thin film is rhombohedral (R3c:H + R (3) over barm:R). More importantly, the percentage of the space groups R3c:H and R (3) over barm: R is changed with the substitution of Mn into the Fe-site in the BHFO thin film, which indicates the presence of a structural transition in BHFMO. (X-ray photoelectron spectroscopy) XPS analysis confirms that (Ho, Mn) co-doping decreases the oxygen vacancy concentration, showing less Fe2+ ions in the co-doped BHFMO thin films compared with the BHFO thin film. The leakage current of the BHFMOx=0.01 thin film is 5.398 x 10(-4) A cm(-2) at 400 kV cm(-1), which is reduced effectively compared with BHFO (2.63 x 10(-3) A cm(-2)). Well saturated hysteresis loops with a large remanent polarization of similar to 80 mu C cm(-2) in the BHFMOx=0.01 thin film is observed, due to the reduced leakage current and the structural transition. The BHFMOx=0.01 thin film also shows enhanced ferromagnetism with saturated magnetization (M-s = 5.24 emu cm(-3)) due to the destruction of the antiferromagnetically ordered spins arising from a structural transition.
机译：通过化学溶液沉积合成具有Bi0.90Ho0.10Fe1-xMnxO3（BHFMO）（x = 0、0.01、0.03、0.05）组成的Mn取代的Bi0.90Ho0.10FeO3（BHFO）薄膜。系统研究了Mn掺杂剂对Bi0.90Ho0.10FeO3薄膜结构和多铁性的影响。 X射线衍射，Rietveld精细化和拉曼光谱分析表明，BHFMO薄膜的晶体结构为菱形（R3c：H + R（3）在barm：R上）。更重要的是，在BHFO薄膜中，R3c：H和R（3）的空间基团在barm：R上的百分比随Mn的取代而改变，这表明BHFMO中存在结构转变。 （X射线光电子能谱）XPS分析证实，（Ho，Mn）共掺杂降低了氧空位浓度，与BHFO薄膜相比，共掺杂BHFMO薄膜中的Fe2 +离子更少。 BHFMOx = 0.01薄膜在400 kV cm（-1）时的泄漏电流为5.398 x 10（-4）A cm（-2），与BHFO（2.63 x 10（-3）A cm （-2））。由于减少了泄漏电流和结构转变，在BHFMOx = 0.01薄膜中观察到了饱和磁滞回线，具有大的剩余极化，类似于80μC cm（-2）。 BHFMOx = 0.01薄膜还显示出增强的铁磁性，具有饱和磁化强度（Ms = 5.24 emu cm（-3）），这是由于结构转变引起的反铁磁有序自旋的破坏。

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