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Graphyne as a promising substrate for high density magnetic storage bits

机译:Graphyne作为高密度磁存储位的有前途的衬底

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Applying magnetic nanostructures in high density magnetic data storage is hindered by a lack of suitable substrate. Using density functional theory, we explored the potentiality of graphyne as a template for nanomagnetic bits. Due to the unique porous structure of graphyne, Os atom tightly binds to the graphyne at the hollow site with an in-plane MAE of 18 meV. Through a rigid band model, we introduced the strategy to manipulate the MAE by rearrangement of d-orbitals of Os atom. A large MAE of about 48 meV was obtained for F functionalized Os@graphyne. To obtain the out-of-plane easy axis, we have considered the MAE of several transition-metal combinations. We finally identified Os-Os@graphyne as an excellent candidate for room temperature applications due to the high MAE and the structural stability.
机译:缺乏合适的基板阻碍了在高密度磁性数据存储中应用磁性纳米结构。使用密度泛函理论,我们探索了石墨烯作为纳米磁性钻头模板的潜力。由于石墨烯的独特多孔结构,Os原子在空心位置与石墨烯紧密结合,面内MAE为18 meV。通过刚性带模型,我们介绍了通过重排Os原子的d轨道来操纵MAE的策略。对于F官能化的Os @ graphyne,获得了约48meV的大MAE。为了获得平面外易轴,我们考虑了几种过渡金属组合的MAE。由于高MAE和结构稳定性,我们最终确定Os-Os @ graphyne是室温应用的极佳候选者。

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