• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Semi-transparent silicon-rich silicon carbide photovoltaic solar cells
【24h】

Semi-transparent silicon-rich silicon carbide photovoltaic solar cells

机译：半透明富硅碳化硅光伏太阳能电池

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

All silicon-rich silicon carbide (Si-rich SixC1-x)-based single p-i-n junction photovoltaic solar cells (PVSCs) were fabricated by growing nonstoichiometric Si-rich SixC1-x films through medium-temperature hydrogen-free plasma enhanced chemical vapor deposition. The Si-rich SixC1-x-based thin-film p-i-n junction PVSCs exhibit improved power conversion efficiency when an intrinsic Si-rich SixC1-x absorbing layer with a low C/Si composition ratio is added; amorphous Si (a-Si) particles are embedded in this absorbing layer. Lowering the [CH4]/[CH4 + SiH4] fluence ratio from 0.5 to 0.3 reduces the C/Si composition ratio of Si-rich SixC1-x films from 0.74 to 0.665. The absorbance of these films in the visible light region (400-800 nm) is substantially enhanced to 3.8 x 10(5) cm(-1) by reducing the [CH4]/[CH4 + SiH4] fluence ratio, which is up to one order of magnitude larger than that of crystalline Si. The open-circuit voltage and short-circuit current density of the indium tin oxide/p-SixC1-x/i-SixC1-xSi(x)C(1-x)/Al PVSCs are enhanced to 0.51 V and to 19.7 mA cm(-2), respectively, raising the conversion efficiency and filling factor to 2.24% and 0.264, respectively. Through hydrogen-free deposition of the Si-rich SixC1-x p-i-n cells on a-Si based p-i-n cells, Si-rich SixC1-x/a-Si hybrid tandem PVSCs exhibit enhanced conversion efficiency and an enhanced filling factor of 6.47% and 0.332, respectively.
机译：通过中温无氢等离子体增强化学气相沉积法生长非化学计量的富含Si的SixC1-x膜，制造了所有基于富含硅的碳化硅（Si富含SixC1-x）的单p-i-n结光伏太阳能电池（PVSC）。当添加具有低C / Si组成比的本征富含Si的SixC1-x吸收层时，富含Si的SixC1-x基薄膜p-i-n结PVSC表现出改进的功率转换效率。非晶Si（a-Si）颗粒嵌入该吸收层中。将[CH4] / [CH4 + SiH4]的注量比从0.5降低到0.3，会使富Si的SixC1-x膜的C / Si组成比从0.74降低到0.665。通过降低[CH4] / [CH4 + SiH4]的注量比，这些膜在可见光区域（400-800 nm）的吸收率基本上提高到3.8 x 10（5）cm（-1）。比晶体硅大一个数量级铟锡氧化物/ p-SixC1-x / i-SixC1-x / nSi（x）C（1-x）/ Al PVSC的开路电压和短路电流密度分别提高到0.51 V和19.7 mA cm（-2）分别将转换效率和填充系数分别提高到2.24％和0.264。通过在基于a-Si的pin电池上无硅沉积富含Si的SixC1-x pin电池，富含Si的SixC1-x / a-Si混合串联PVSC表现出增强的转化效率和6.47％和0.332的填充率， 分别。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号