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首页> 外文期刊>RSC Advances >Bottom-up growth of Ag/a-Si@Ag arrays on silicon as a surface-enhanced Raman scattering substrate with high sensitivity and large-area uniformity
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Bottom-up growth of Ag/a-Si@Ag arrays on silicon as a surface-enhanced Raman scattering substrate with high sensitivity and large-area uniformity

机译：自底向上生长Ag / a-Si @ Ag阵列在硅上作为具有增强灵敏度和大面积均匀性的表面增强拉曼散射衬底

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摘要

In this work, we demonstrated a bottom-up growth of Ag/a-Si@Ag nanosphere arrays on Si to work as a high performance SERS substrate. By a solid-state dewetting process, high density Ag nanoparticle arrays were formed on the Si substrate with large-area uniformity. With well-controlled thicknesses of a-Si and Ag outer-layer coating, the SERS properties can be optimized with the inter-particle spacing of the Ag/a-Si@Ag NSs limited to several nanometers. Based on the analysis of optical properties and SERS activities to rho-Tc molecules, we concluded that the optimized SERS substrate performed with both high sensitivity and large-area uniformity. A detection limit as low as 10(-14) M and an enhancement factor (EF) up to 10(8) were obtained. Furthermore, the wafer scale large-area uniformity and reproducibility of the SERS signal were confirmed with small standard deviation, e.g., 8% at 1076 cm(-1) and 9% at 1593 cm(-1). The generic approach presented here can be extended to create a new class of highly sensitive SERS sensors with large-area output, and may play an important role in device design and the corresponding diverse chemical and biological detection tasks.
机译：在这项工作中，我们证明了在Si上自下而上生长Ag / a-Si @ Ag纳米球阵列可作为高性能SERS衬底。通过固态去湿工艺，在硅衬底上形成具有大面积均匀性的高密度银纳米颗粒阵列。通过很好地控制a-Si和Ag外层涂层的厚度，可以将Ag / a-Si @ Ag NSs的颗粒间间距限制在几纳米，从而优化SERS性能。基于对rh-Tc分子的光学性质和SERS活性的分析，我们得出结论，优化的SERS底物具有高灵敏度和大面积均匀性。检出限低至10（-14）M，增强因子（EF）高达10（8）。此外，以较小的标准偏差确认了晶圆级SERS信号的大面积均匀性和可重复性，例如在1076 cm（-1）处为8％，在1593 cm（-1）处为9％。此处介绍的通用方法可以扩展为创建具有大面积输出的新型高灵敏度SERS传感器，并且可以在设备设计以及相应的各种化学和生物检测任务中发挥重要作用。

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