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Copper nanowire synthesis by directed electrochemical nanowire assembly

机译:定向电化学纳米线组装合成铜纳米线

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We present the growth of high aspect ratio copper nanowires with diameters of about 100 nm and a length of up to several micrometers via directed electrochemical nanowire assembly (DENA). We demonstrate that the nanowire morphology is controlled by the metal salt solution concentration and by the amplitude and frequency of the applied alternating voltage. The frequency was found to notably affect the nanowire diameter. The impact of the process parameters on the nanowire growth is discussed on the basis of the Butler-Volmer equation. The presented results for the bottom-up fabrication of copper wires are of high interest for nanosensor design, particularly for developing highly sensitive gas sensors. We suggest guidelines for the formation of copper nanowires based on experimental and theoretical considerations.
机译:我们通过定向电化学纳米线组件(DENA)提出了直径约100 nm,长度可达几微米的高长宽比铜纳米线的生长。我们证明了纳米线的形态是由金属盐溶液浓度以及所施加的交流电压的幅度和频率控制的。发现该频率显着影响纳米线直径。基于Butler-Volmer方程,讨论了工艺参数对纳米线生长的影响。自下而上制造铜线的结果对于纳米传感器设计,特别是对开发高灵敏度气体传感器的研究非常重要。我们建议基于实验和理论考虑的铜纳米线的形成指南。

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