Electrode dependence of resistive switching in Au/Ni-Au nanoparticle devices

Zhong Shuai; Duan Sibin; Cui Yimin

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Electrode dependence of resistive switching in Au/Ni-Au nanoparticle devices

机译：Au / Ni-Au纳米粒子器件中电阻转换的电极依赖性

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We synthesized Ni-Au nanoparticles (NPs) by a wet chemical method and fabricated sandwich structures of Au/Ni-Au NPs/Nb-doped SrTiO3 and Au/Ni-Au NPs/ITO (Indium Tin Oxide) glass. The Ni-Au NPs were identified as having a spindle-like nanostructure. Different bipolar resistive switching appeared. Linear fitting of I-V curves reveals that resistive switching follows the SCLC (Space Charge Limited Current) conduction mechanism. The switching behavior of Au/Ni-Au NPs/Nb-doped SrTiO3 is attributed to the electron trapping/detrapping of oxygen vacancies at the interface between NPs and Nb-doped SrTiO3, and that of Au/Ni-Au NPs/ITO glass which shows good switch characteristics such as high ON/OFF ratio, low SET voltage, can be ascribed to formation of a filament.

机译：我们通过湿化学方法合成了Ni-Au纳米颗粒（NPs），并制备了Au / Ni-Au NPs / Nb掺杂SrTiO3和Au / Ni-Au NPs / ITO（氧化铟锡）玻璃的三明治结构。 Ni-Au NP被鉴定为具有纺锤状纳米结构。出现了不同的双极电阻切换。 I-V曲线的线性拟合表明，电阻切换遵循SCLC（空间电荷限制电流）传导机制。 Au / Ni-Au NPs / Nb掺杂SrTiO3的开关行为归因于NPs和Nb掺杂SrTiO3之间的界面处的氧空位的电子俘获/去俘获以及Au / Ni-Au NPs / ITO玻璃的电子俘获/去俘获显示出良好的开关特性，例如高开/关比，低SET电压，可归因于灯丝的形成。

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《RSC Advances》 |2014年第77期|共6页
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Zhong Shuai; Duan Sibin; Cui Yimin;
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1. Electrode dependence of resistive switching in Au/Ni-Au nanoparticle devices [J] . Zhong Shuai, Duan Sibin, Cui Yimin RSC Advances . 2014,第77期

机译：Au / Ni-Au纳米粒子器件中电阻转换的电极依赖性
2. Electron transfer at the contact between Al electrode and gold nanoparticles of polymer: Nanoparticle resistive switching devices studied by alternating current impedance spectroscopy [J] . Ouyang Jianyong Applied Physics Letters . 2013,第23期

机译：铝电极与聚合物金纳米颗粒之间接触时的电子转移：通过交流阻抗谱研究的纳米电阻开关器件
3. Electron transfer at the contact between Al electrode and gold nanoparticles of polymer: Nanoparticle resistive switching devices studied by alternating current impedance spectroscopy [J] . Jianyong Ouyang Applied Physics Letters . 2013,第23期

机译：铝电极与聚合物金纳米颗粒之间接触时的电子转移：通过交流阻抗谱研究的纳米电阻开关器件
4. Electrode material dependence of resistive switching behavior in Ta2O5resistive analog neuromorphic device [C] . Hisashi Shima, Makoto Takahashi, Yasuhisa Naitoh, IEEE Electron Devices Technology and Manufacturing Conference . 2018

机译：Ta 2 O 5 电阻模拟神经形态装置中电阻切换行为的电极材料依赖性
5. Resistive Switching Memory and Reconfigurable Devices. [D] . Zhou, Jiantao. 2016

机译：电阻式切换存储器和可重配置设备。
6. Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device [O] . Venkata Raveendra Nallagatla, Janghyun Jo, Susant Kumar Acharya, -1

机译：通过使用Au-探针尖端作为外延棕色氧化蒙脱石忆阻器件的顶部电极来限制垂直导电灯丝以实现可靠的电阻切换
7. Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films [O] . Toshihiro Nakamura, Kohei Homma, Kunihide Tachibana 2013

机译：电阻开关器件中金属氧化物的薄膜沉积：锰矿薄膜中电阻开关的电极材料依赖性

Electrode dependence of resistive switching in Au/Ni-Au nanoparticle devices

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