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首页> 外文期刊>RSC Advances >Preparation of alpha-Fe2O3 films by electrodeposition and photodeposition of Co-Pi on them to enhance their photoelectrochemical properties
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Preparation of alpha-Fe2O3 films by electrodeposition and photodeposition of Co-Pi on them to enhance their photoelectrochemical properties

机译：通过电沉积和在其上进行Co-Pi的光沉积来制备α-Fe2O3薄膜以增强其光电化学性能

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摘要

In this paper, alpha-Fe2O3 photoanodes with different structures were prepared on indium-doped tin oxide (ITO) coated glass by calcination of electrodeposited alpha-Fe films. Morphologies of the films can be varied from the nanoparticle to sparse dendrites, and then to high-density dendrites as the deposition time is prolonged. Their morphology-dependent photoelectrochemical properties with and without coupling with the photodeposited Co-Pi were investigated through the photocurrent and the photoresponse. The alpha-Fe2O3 film exposing a larger area of the bottom layer has a low photocurrent onset potential; after coupling with the Co-Pi co-catalyst, their onset potentials are shifted to the negative direction. The photocurrent of hematite films can be enhanced more than 40% for the particle type and 70% for the dendritic type regardless of low photocurrent values. This indicates that the photodeposited Co-Pi can effectively suppress the photogenerated electron-hole recombination on the surface of hematite, especially dendritic alpha-Fe2O3.
机译：通过电沉积α-Fe薄膜的煅烧，在掺铟锡（ITO）涂层玻璃上制备了具有不同结构的α-Fe2O3光阳极。随着沉积时间的延长，薄膜的形态可以从纳米颗粒变化到稀疏的树枝状，然后到高密度的树枝状。通过光电流和光响应研究了它们的形态依赖的光电化学性质，以及是否与光沉积的Co-Pi偶联。暴露出较大面积的底层的α-Fe2O3膜具有较低的光电流起始电势。与Co-Pi助催化剂偶联后，它们的起始电势向负方向移动。与低光电流值无关，对于颗粒类型，赤铁矿薄膜的光电流可以提高40％以上，对于树枝状晶体，光电流可以提高70％以上。这表明光沉积的Co-Pi可以有效地抑制赤铁矿，特别是树枝状α-Fe2O3表面上的光生电子-空穴复合。

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