Anomalous Photoconductivity Decay Observed in Microwave Measurements of Carrier Lifetime in Silicon Ingots

P. A. Borodovskii; A. F. Buldygin; A. S. Tokarev

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Anomalous Photoconductivity Decay Observed in Microwave Measurements of Carrier Lifetime in Silicon Ingots

机译：微波测量硅锭载流子寿命中观察到的异常光电导衰减。

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A brief description is given of a microwave noncontact method for measuring excess-carrier lifetime in which a base of the ingot under investigation is selected for pulsed illumination. The method is employed in an experiment on silicon ingots placed between an emitting and a receiving waveguide, with the illumination provided by a 1.06-μm semiconductor laser. With an illuminated area of about 1 mm{sup}2, photoconductivity decay is found to start a considerable length of time following the cessation of the light pulse. The causes of this phenomenon are yet to be identified.

机译：给出了一种用于测量超载子寿命的微波非接触式方法的简要说明，其中选择了所研究锭料的基底进行脉冲照明。该方法用于放置在发射波导和接收波导之间的硅锭的实验中，该照明由1.06-μm的半导体激光器提供。在约1mm 2的照射面积下，发现光导衰减在光脉冲停止之后开始相当长的时间。这种现象的原因还有待确定。

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《Russian Microelectronics》 |2006年第6期|共5页
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P. A. Borodovskii; A. F. Buldygin; A. S. Tokarev;
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中图分类微电子学、集成电路（IC）;
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1. Anomalous Photoconductivity Decay Observed in Microwave Measurements of Carrier Lifetime in Silicon Ingots [J] . P. A. Borodovskii, A. F. Buldygin, A. S. Tokarev Russian Microelectronics . 2006,第6期

机译：微波测量硅锭载流子寿命中观察到的异常光电导衰减。
2. The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (mu-PCD) carrier lifetime measurement [J] . Lv YQ, Wang NL, Zhuang CQ, Semiconductor science and technology . 2006,第6期

机译：通过微波光电导衰减（mu-PCD）载流子寿命测量，InP / InGaAs / InP中InGaAs的均匀性
3. Method for the Microwave Measurement of Carrier Lifetime in Lightly Doped Silicon Ingots [J] . P. A. Borodovskii, A. F. Buldygin, A. S. Tokarev, Russian Microelectronics . 2005,第5期

机译：微波测量轻掺杂硅锭中载流子寿命的方法
4. MEASUREMENT OF MINORITY CARRIER RECOMBINATION LIFETIME IN SILICON WAFERS BY MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE :RESULT OF ROUND ROBIN TEST [C] . Advanced workshop on silicon recombination lifetime characterization methods . 1998

机译：通过微波反射测量光电导衰减测量硅晶片中的少数型载体重组寿命：循环试验结果
5. Microwave Instrumentation and Sensing Techniques for Quantum Efficiency and Minority-Carrier Lifetime Measurements [D] . Lu, Kyle Benjamin. 2017

机译：量子效率和少数载体寿命测量的微波仪表和传感技术
6. Extended carrier lifetimes and diffusion in hybrid perovskites revealed by Hall effect and photoconductivity measurements [O] . Y. Chen, H. T. Yi, X. Wu, -1

机译：霍尔效应和光电导率测量表明杂化钙钛矿中的载流子寿命延长和扩散
7. A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers [O] . Edward Van Brunt, Anant Agarwal, Al Burk, 2013

机译：微波光电导衰减和开路电压衰减寿命测量技术对寿命增强的4H-SiC脱床的比较
8. Carrier Lifetime Measurement by the Photoconductive Decay Method. [R] . Mattis, R. L., Baroody, A. J. 1972

机译：光电导衰减法测量载流子寿命。

Anomalous Photoconductivity Decay Observed in Microwave Measurements of Carrier Lifetime in Silicon Ingots

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