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首页> 外文期刊>Optoelectronics, Instrumentation and Data Processing >Optimization of the Structure of a GaInP/GaAs/Ge Triple-Junction Solar Cell with an Al_(0.1)Ga_(0.9)As/Al_(0.8)Ga_(0.2)As Integrated Bragg Reflector
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Optimization of the Structure of a GaInP/GaAs/Ge Triple-Junction Solar Cell with an Al_(0.1)Ga_(0.9)As/Al_(0.8)Ga_(0.2)As Integrated Bragg Reflector

机译：Al_（0.1）Ga_（0.9）As / Al_（0.8）Ga_（0.2）As集成布拉格反射器的GaInP / GaAs / Ge三结太阳能电池结构的优化

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摘要

The structure of a GaInP/GaAs/Ge triple-junction solar cell (SC) with an integrated Bragg reflector (BR) is optimized, resulting in reduction of losses of transmitted (reflected) radiation in tunnel diode layers. The optimized structure of the SC with a BR is obtained by means of metal-organic chemical vapor deposition. 20 × 30-mm SC samples are manufactured. The samples of SCs with and without BRs are tested under the action of electron fluxes with the energies of 1 MeV. It is shown that the SC radiation resistance can be increased by integrating a Bragg reflector into the SC structure and decreasing the thickness of the middle p-n junction base.
机译：具有集成布拉格反射器（BR）的GaInP / GaAs / Ge三结太阳能电池（SC）的结构得到了优化，从而降低了隧道二极管层中透射（反射）辐射的损耗。带有BR的SC的优化结构是通过金属有机化学气相沉积获得的。生产出20×30毫米SC样品。在具有1 MeV能量的电子通量的作用下，测试有无BR的SC样品。结果表明，通过将布拉格反射器集成到SC结构中并减小中间p-n结基极的厚度，可以提高SC的抗辐射能力。

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