Electron-Phonon Interaction and Raman Scattering in Doped GaAs/AlAs Superlattices

V. A. Volodin

首页> 外文期刊>Optoelectronics, Instrumentation and Data Processing >Electron-Phonon Interaction and Raman Scattering in Doped GaAs/AlAs Superlattices

【24h】

Electron-Phonon Interaction and Raman Scattering in Doped GaAs/AlAs Superlattices

机译：GaAs / AlAs掺杂超晶格中的电子声子相互作用和拉曼散射

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The Raman scattering spectroscopy method is used to study the interaction of phonons and free charge carriers in doped semiconductor nanostructures (superlattices). In doped superlattices based on polar semiconductors, the collective vibrational modes of free charge carriers (plasmons) shield the long-range Coulomb interaction of cations and anions, which leads to the formation of mixed phonon-plasmon modes. The angular dispersion (anisotropy) of phonon-plasmon modes in doped GaAs/AlAs superlattices is studied. The observed anisotropy is due to the anisotropy of dielectric permeability in superlattices.

机译：拉曼散射光谱法用于研究掺杂的半导体纳米结构（超晶格）中声子与自由载流子的相互作用。在基于极性半导体的掺杂超晶格中，自由电荷载流子（等离子体激元）的集体振动模式屏蔽了阳离子和阴离子的长距离库仑相互作用，从而导致混合声子等离子体激元模式的形成。研究了掺杂GaAs / AlAs超晶格中声子-等离激元模的角分散（各向异性）。观察到的各向异性是由于超晶格中介电常数的各向异性。

著录项

来源
《Optoelectronics, Instrumentation and Data Processing》 |2014年第3期|共5页
作者
V. A. Volodin;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类仪器、仪表;
关键词
Phonons; Plasmons; Localization; Raman scattering;

机译：声子;等离子;局部化;拉曼散射;

相似文献

外文文献
中文文献
专利

1. Electron-Phonon Interaction and Raman Scattering in Doped GaAs/AlAs Superlattices [J] . V. A. Volodin Optoelectronics, Instrumentation and Data Processing . 2014,第3期

机译：GaAs / AlAs掺杂超晶格中的电子声子相互作用和拉曼散射
2. Electron-Phonon Interaction in Short-Period (GaAs)_m(AlAs)_n (001) Superlattices [J] . S. N. Grinyaev, L. N. Nikitina, V. G. Tyuterev Semiconductors . 2014,第3期

机译：（GaAs）_m（AlAs）_n（001）超晶格中的电子-声子相互作用
3. ENHANCEMENT OF ELECTRON-PHONON INTERACTION IN ULTRASHORT-PERIOD GAAS/ALAS SUPERLATTICES [J] . Litovchenko VG., Krylyuk S., Grahn HT., Physical Review, B. Condensed Matter . 1997,第16期

机译：超短周期GAAS / ALAS超晶格中电子-声子相互作用的增强
4. The vertical electrical conductivity studied by Raman scattering in the GaAs/AlAs and δ-doped GaAs superlattices [C] . J. C. Galzerani, Y. A. Pusep, M. T. O. Silva, International Conference on Raman Spectroscopy . 2000

机译：通过拉曼散射在GaAs / AlaS和Δ掺杂GaAs超级图中研究的垂直导电性
5. Investigation of Anisotropic Thermal Conductivity of GaAs/AlAs Superlattices. [D] . Li, Ran. 2016

机译：GaAs / AlAs超晶格各向异性导热系数的研究。
6. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces [O] . Alexander Milekhin, Nikolay Yeryukov, Alexander Toropov, 2012

机译：在（001）和（311）B GaAs表面上生长的InAs / AlAs量子点超晶格的拉曼散射
7. A Comparison between Resonant Raman Scattering in Type II GaAs/AlAs Superlattices and Single GaAs Quantum Wells [O] . A. Sayari, A. Mlayah, F. F. Charfi, 1998

机译：II型Gaas / alas超晶格与单Gaas量子阱中共振拉曼散射的比较
8. Corrugation of the (311) A interface found by Raman scattering in GaAs/AlAs superlattices [R] . Silva, S. W. , Pusep, Y. , Galzerani, J. C. , 1995

机译：通过拉曼散射在Gaas / alas超晶格中发现的（311）a界面的波纹

Electron-Phonon Interaction and Raman Scattering in Doped GaAs/AlAs Superlattices

摘要

著录项

相似文献

相关主题

期刊订阅