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首页> 外文期刊>Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter >High-speed ablation etching of GaN semiconductor using femtosecond laser
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High-speed ablation etching of GaN semiconductor using femtosecond laser

机译：飞秒激光对GaN半导体的高速烧蚀

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摘要

Using intense femtosecond laser (150 fs, 790 nm, 1 kpps), precise and high-speed laser ablation etching of hexagonal GaN is demonstrated. Etch rate above the ablation threshold is measured to be <5 nm/pulse. An etch rate per second of 25 μm/s is realized at a fluence of 2.2 J/cm~(2). Although conventional long pulsed, tens of ns, KrF laser ablation of the GaN resulted in the formation of a Ga layer on the ablated surface due to laser-induced thermal decomposition process, the femtosecond laser etching is found to keep the ablated surface unchanged due to non-thermal ablation. Based on the XPS spectra observation the femtosecond laser ablated GaN surface is found to remain unchanged.
机译：使用强飞秒激光（150 fs，790 nm，1 kpps），对六角形GaN进行了精确且高速的激光烧蚀蚀刻。高于烧蚀阈值的蚀刻速率经测量为<5 nm /脉冲。在2.2J / cm〜（2）的注量下实现了每秒25μm/ s的蚀刻速率。尽管常规的长脉冲，数十ns的GaN的KrF激光烧蚀由于激光诱导的热分解过程而在烧蚀的表面上形成了Ga层，但飞秒激光刻蚀却可以使烧蚀的表面保持不变，这是由于非热消融。根据XPS光谱观察，发现飞秒激光烧蚀的GaN表面保持不变。

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