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首页> 外文期刊>Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter >Fabrication of highly ytterbium (Yb~(3+))-doped YAG thin film by pulsed laser deposition
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Fabrication of highly ytterbium (Yb~(3+))-doped YAG thin film by pulsed laser deposition

机译：脉冲激光沉积制备掺y（Yb〜（3+））的高YAG薄膜

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摘要

As an infrared laser waveguide, the epitaxial growth of 5 μm-thick ytterbium (Yb~(3+))-doped yttrium aluminum garnet (YAG) thin films on YAG(111) (Y_(3)Al_(5)O_(12)) substrate has been demonstrated by pulsed KrF laser deposition with post-annealing. Highly Yb~(3+)-doped (up to 100 at. %) YAG films have been epitaxially grown on YAG(111). The crystalline quality of the grown films does not degrade even with high doping concentrations of Yb~(3+) ions up to 100 at. %. The roughness (root mean square) of the film is measured as 1.27 nm without droplets or particulates. The optical properties of these films have been characterized in terms of absorption spectra, fluorescence spectra and fluorescent lifetime. The refractive index of n at 1.03 μm is measured to be 1.851±0.0141 for 50 at. % Yb~(3+):YAG. An emission lifetime of 0.90±0.01 ms is obtained for 1.03 μm transition.
机译：作为红外激光波导，在YAG（111）（Y_（3）Al_（5）O_（12 ））已通过脉冲KrF激光沉积和后退火技术证明了基板。在YAG（111）上外延生长了高度Yb〜（3+）掺杂（最高100 at。％）的YAG薄膜。即使高掺杂浓度的Yb〜（3+）离子高达100 at，生长的薄膜的晶体质量也不会降低。 ％。膜的粗糙度（均方根）测量为1.27 nm，无液滴或颗粒。这些膜的光学性质已经根据吸收光谱，荧光光谱和荧光寿命表征。对于50at。，n在1.03μm的折射率被测量为1.851±0.0141。 ％Yb〜（3 +）：YAG。对于1.03μm的跃迁，可获得0.90±0.01 ms的发射寿命。

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