CALCULATION OF GAIN SATURATION CAUSED BY PHOTON DENSITY LONGITUDINAL HOLE BURNING IN SEMICONDUCTOR LASERS AND IN A SEMICONDUCTOR LIGHT AMPLIFIER

Sun HY.

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CALCULATION OF GAIN SATURATION CAUSED BY PHOTON DENSITY LONGITUDINAL HOLE BURNING IN SEMICONDUCTOR LASERS AND IN A SEMICONDUCTOR LIGHT AMPLIFIER

机译：半导体激光器和半导体光放大器中光子密度纵向孔燃烧引起的增益饱和度的计算

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A simple theory using rate equations is presented to calculate the gain saturation caused by photon density longitudinal hole burning in semiconductor lasers with unequal cavity facet reflectivity and in a semiconductor light amplifier. Spatial varying gain factor is considered. The numerical results show that the gain saturation is negligible for commonly used semiconductor lasers and may not be negligible for the semiconductor light amplifier. [References: 18]

机译：提出了一种使用速率方程的简单理论，以计算在腔面反射率不相等的半导体激光器和半导体光放大器中，由光子密度纵向空穴燃烧引起的增益饱和。考虑空间变化的增益因子。数值结果表明，增益饱和度对于常用的半导体激光器可以忽略不计，而对于半导体光放大器而言则可以忽略不计。 [参考：18]

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《Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter》 |1996年第6期|共6页
作者
Sun HY.;
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原文格式 PDF
正文语种 eng
中图分类光学;
关键词
High-speed modulation; Diode-lasers; Dynamics; Nonlinearities; Mode;

机译：高速调制;二极管激光器;动力学;非线性;模式;

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1. CALCULATION OF GAIN SATURATION CAUSED BY PHOTON DENSITY LONGITUDINAL HOLE BURNING IN SEMICONDUCTOR LASERS AND IN A SEMICONDUCTOR LIGHT AMPLIFIER [J] . Sun HY. Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 1996,第4a6期

机译：半导体激光器和半导体光放大器中光子密度纵向孔燃烧引起的增益饱和度的计算
2. Detailed Model and Investigation of Gain Saturation and Carrier Spatial Hole Burning for a Semiconductor Optical Amplifier With Gain Clamping by a Vertical Laser Field [J] . Chao-Yuan Jin, Yong-Zhen Huang, Li-Juan Yu, IEEE Journal of Quantum Electronics . 2004,第5期

机译：具有垂直激光场钳位增益的半导体光放大器的增益饱和和载流子空间烧孔的详细模型和研究
3. Gain saturation enhancement of longitudinal hole burning via standing wave induced wave coupling in a semiconductor laser [J] . Haiyin Sun IEEE Journal of Quantum Electronics . 1996,第4期

机译：半导体激光器中通过驻波感应波耦合提高纵向烧孔的饱和度
4. Longitudinal spatial hole burning in a gain clamped semiconductor optical amplifier [C] . Salleras, F., Nomura, . 2002

机译：增益钳位半导体光放大器中的纵向空间烧孔
5. Calculation and Experimental Verification of Longitudinal Spatial Hole Burning in High- Power Semiconductor Lasers [D] . Hao, Ting 2014

机译：大功率半导体激光器纵向空间烧孔的计算和实验验证
6. Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications [O] . A. Bilenca, S. H. Yun, G. J. Tearney, -1

机译：波长扫描半导体环形激光器的数值研究：折射率非线性在半导体光放大器中的作用及其对生物医学成像应用的影响
7. Measurement and calculation of the critical pulsewidth for gain saturation in semiconductor optical amplifiers [O] . P. Borri, S. Scaffetti, J. Mørk, 1999

机译：半导体光放大器中增益饱和度的临界脉冲宽度的测量和计算

CALCULATION OF GAIN SATURATION CAUSED BY PHOTON DENSITY LONGITUDINAL HOLE BURNING IN SEMICONDUCTOR LASERS AND IN A SEMICONDUCTOR LIGHT AMPLIFIER

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