Direct determination of EL2 thermal recovery rate at 300 K

R. Aleksiejunas; M. Sudzius; K. Jarasiunas

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Direct determination of EL2 thermal recovery rate at 300 K

机译：直接确定300 K下EL2的热回收率

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摘要

Photoquenching of EL2 in semi-insulating GaAs and its thermal recovery from a metastable state at room temperature have been analyzed numerically and investigated experimentally by light diffraction on transient grating technique. The rate of thermal recovery at 300 K, r=(1-2)×10~(6) s~(-1), has been determined from the decay of spatially photoquenched EL2 structure.

机译：对半绝缘GaAs中EL2的光猝灭及其在室温下从亚稳态的热回收进行了数值分析，并通过瞬态光栅技术通过光衍射进行了实验研究。根据空间光淬火的EL2结构的衰减来确定300 K时的热恢复率r =（1-2）×10〜（6）s〜（-1）。

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《Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter》 |2001年第3期|共6页
作者
R. Aleksiejunas; M. Sudzius; K. Jarasiunas;
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正文语种 eng
中图分类光学;
关键词
Metastable EL2 defect; Optical nonlinearities; Four-wave mixing;

机译：亚稳态EL2缺陷;光学非线性;四波混频;

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1. Direct determination of EL2 thermal recovery rate at 300 K [J] . R. Aleksiejunas, M. Sudzius, K. Jarasiunas Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 2001,第1a3期

机译：直接确定300 K下EL2的热回收率
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Direct determination of EL2 thermal recovery rate at 300 K

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