• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optics Letters >Optical investigation of band-edge structure and built-in electric field of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy
【24h】

Optical investigation of band-edge structure and built-in electric field of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy

机译：通过热反射，光致发光和非接触电反射光谱法对AlGaN / GaN异质结构的带边结构和内置电场进行光学研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The band-edge property and built-in electric fields of two different Al_(x)Ga_(1-x)N/GaN (AlGaN/GaN) hetero-structures (HSs) with and without an additional AlGaN inserted layer were studied by thermoreflectance (TR), photoluminescence (PL), and contactless electroreflectance (CER) techniques. The PL spectra characterize the band-edge luminescence property of GaN. Free exciton transitions of AlGaN and GaN were probed experimentally by TR. Prominent Franz-Keldysh oscillations (FKOs) of GaN and the opposite FKO phase of AlGaN were simultaneously detected by the additional AlGaN inserted sample with CER owing to the enhancement effect of built-in electric fields of GaN and AlGaN with the same polarity direction. Optoelectronics properties of the two HSs were characterized by the experimental analyses.
机译：通过热反射研究了两种不同的Al_（x）Ga_（1-x）N / GaN（AlGaN / GaN）异质结构（HSs）在具有和不具有额外的AlGaN插入层的情况下的带边特性和内置电场（TR），光致发光（PL）和非接触电反射（CER）技术。 PL光谱表征了GaN的带边发光特性。 TR实验研究了AlGaN和GaN的自由激子跃迁。由于具有相同极性方向的GaN和AlGaN的内置电场的增强作用，额外的带有CER的AlGaN插入样品同时检测到GaN的明显Franz-Keldysh振荡（FKO）和AlGaN的相反FKO相。通过实验分析表征了两个HS的光电特性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号