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Laser ablation of silicon in water with nanosecond and femtosecond pulses

机译:用纳秒和飞秒脉冲激光烧蚀水中的硅

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摘要

We describe laser ablation of Si under water by 5 ns, 355 nm and 100 fs, 800 nm pulses. Compared to that in air, an approximately twofold improvement in the ablation rate is found in water for femtosecond and nanosecond pulses. For higher laser irradiances, the plasma that forms at the water-air interface hampers further improvement of the ablation rate. We investigated the enhanced ablation process in water and found that the cavity-confinement geometry that increases the laser energy coupling to the target and allows more energy to be transferred to the cavity sidewalls plays an important role in the escalated material removal process. In addition, we show that the water layer that effectively reduces the oxidation and redeposition of the ablated debris is also responsible for improvements in the ablation process.
机译:我们描述了在水下5 ns,355 nm和100 fs,800 nm脉冲对Si的激光烧蚀。与空气相比,飞秒和纳秒脉冲在水中的消融速率提高了大约两倍。对于更高的激光辐照度,在水-空气界面处形成的等离子体会阻碍消融速率的进一步提高。我们研究了水中增强的烧蚀过程,发现增加激光能量耦合到靶标并允许更多能量转移到腔体侧壁的腔体约束几何形状在升级的材料去除过程中起着重要作用。另外,我们表明有效减少烧蚀碎片的氧化和再沉积的水层也有助于烧蚀工艺的改进。

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