1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

Lee MK.; Wang YH.; Sze SM.; Chu CH.

首页> 外文期刊>Optics Letters >1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

【24h】

1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

机译：肖特基势垒多孔硅光电探测器的1.55微米和红外波段光响应

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum. The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum, 10-mW laser diode. The corresponding quantum efficiency is 14.4%. (C) 2001 Optical Society of America. [References: 12]

机译：我们已经研究了多孔硅肖特基势垒光电探测器在0.4-1.7μm波长范围内的光谱响应。该光电探测器在可见光和红外波段都表现出很强的光响应性，尤其是在1.55μm处。在1.55μm，10mW的激光二极管照射下，在6V的反向偏置下，光电流可以达到1.8mA。相应的量子效率为14.4％。（C）2001年美国眼镜学会。 [参考：12]

著录项

来源
《Optics Letters》 |2001年第3期|共3页
作者
Lee MK.; Wang YH.; Sze SM.; Chu CH.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类光学;
关键词

相似文献

外文文献
中文文献
专利

1. 1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector [J] . Lee MK., Wang YH., Sze SM., Optics Letters . 2001,第3期

机译：肖特基势垒多孔硅光电探测器的1.55微米和红外波段光响应
2. Oxidized Nano-Porous-Silicon Buffer Layers for Suppressing the Visible Photoresponsivity of ZnO Ultraviolet Photodetectors on Si Substrates [J] . Kuen-HsienWu Journal of nanomaterials . 2014,第1期

机译：氧化纳米多孔硅缓冲层，用于抑制硅衬底上ZnO紫外线光电探测器的可见光响应性
3. Oxidized Nano-Porous-Silicon Buffer Layers for Suppressing the Visible Photoresponsivity of ZnO Ultraviolet Photodetectors on Si Substrates [J] . Kuen-HsienWu Journal of nanomaterials . 2014,第1期

机译：氧化纳米多孔硅缓冲层，用于抑制硅衬底上ZnO紫外线光电探测器的可见光响应性
4. Photocurrent Enhancement Between Two Coplanar Schottky-Barriers on Silicon MSM Photodetector [C] . Narin Atiwongsangthong, Surasak Niemcharoen International Conference on Applied Materials and Electronics Engineering . 2013

机译：硅MSM光电探测器两种共面肖特基屏障之间的光电流增强
5. The fabrication, microstructural characterization, and internal photoresponse of platinum silicide/p-type silicon and iridium silicide/p-type silicon Schottky barrier photodetectors for infrared focal plane arrays [D] . Mercer, Douglas Edward 1990

机译：红外焦平面阵列用硅化铂/ p型硅和硅化铱/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应
6. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts [O] . Gustavo A. Saenz, Goran Karapetrov, James Curtis, -1

机译：具有低肖特基势垒接触的紫外到红外悬浮金属-半导体-金属介观多层MoS2宽带探测器中的超高光响应性
7. Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation [O] . Knoch J., Zang M., Zhao Q. T., 2005

机译：使用掺杂剂隔离的绝缘体上硅基肖特基势垒金属氧化物半导体场效应晶体管有效降低肖特基势垒
8. Fabrication, Microstructural Characterization, and Internal Photoresponse ofPlatinum Silicide/P-Type Silicon and Iridium Silicide/P-Type Silicon Schottky Barrier Photodetectors for Infrared Focal Plane Arrays [R] . Mercer, D. E. 1991

机译：用于红外焦平面阵列的铂硅化物/ p型硅和铱硅化物/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应

1.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

摘要

著录项

相似文献

相关主题

期刊订阅