The development of ultrahigh-quality-factor (Q) silicon-on-insulator (SOI) microring resonators based on silicon wire waveguides is presented. An analytical description is derived, illustrating that in addition to low propagation losses the critical coupling condition is essential for optimizing device characteristics. Propagation losses as low as 1.9 +/- 0.1 dB/cm in a curved waveguide with a bending radius of 20 mum and a Q factor as high as 139.000 +/- 6.000 are demonstrated. These are believed to be the highest values reported for a curved SOI waveguide device and for any directly structured semiconductor microring fabricated without additional melting-induced surface smoothing. (C) 2004 Optical Society of America.
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机译：提出了基于硅线波导的超高品质因数（Q）绝缘体上硅（SOI）微环谐振器的开发。得出的分析说明表明，除了低传播损耗外，关键的耦合条件对于优化器件特性也是必不可少的。在弯曲半径为20um且Q因子高达139.000 +/- 6.000的弯曲波导中，传输损耗低至1.9 +/- 0.1 dB / cm。对于弯曲的SOI波导器件以及在不进行额外的熔融诱导的表面平滑处理的情况下制造的任何直接结构化的半导体微环，这些值据认为是最高值。 （C）2004年美国眼镜学会。
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