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首页> 外文期刊>Optics Letters >Broadband near-infrared luminescence in gamma-irradiated Bi-doped alpha-BaB_(2)O_(4) single crystals
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Broadband near-infrared luminescence in gamma-irradiated Bi-doped alpha-BaB_(2)O_(4) single crystals

机译：γ辐照的Bi-掺杂的Ba-BaB_（2）O_（4）单晶中的宽带近红外发光

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摘要

Spectroscopic properties of as-grown and gamma-irradiated undoped and Bi-doped alpha-BBO (BaB_(2)O_(4)) single crystals were investigated. Bi~(2+) and color centers in Bi:alpha-BBO crystals were investigated to be nonluminescent in the near-infrared (NIR) region. Broadband NIR luminescence at 1139 nm with a FWHM of 108 nm and a decay time of 526 (mu)s was realized in Bi:alpha-BBO crystal through gamma irradiation. Bi~(+) was attributed to be responsible for the NIR emission, which can be bleached by thermal annealing. The involved physical processes in Bi:alpha-BBO crystal during the courses of irradiation and heat annealing were tentatively established.
机译：研究了已生长和γ辐照的未掺杂和Bi掺杂的α-BBO（BaB_（2）O_（4））单晶的光谱性质。研究Bi：alpha-BBO晶体中的Bi〜（2+）和色心在近红外（NIR）区域不发光。通过伽马射线照射，在Bi：alpha-BBO晶体中实现了1139 nm的宽带NIR发光，FWHM为108 nm，衰减时间为526μs。 Bi〜（+）归因于NIR发射，可以通过热退火将其漂白。初步建立了Bi：α-BBO晶体在辐照和热退火过程中涉及的物理过程。

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