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Study on measurement of linear electro-optic coefficient of a minute irregular octahedron cBN wafer

机译:微小不规则八面体cBN晶片线性电光系数的测量研究

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摘要

The cubic boron nitride (cBN) is a kind of artificial electro-optic (EO) crystal, and we have not found any relative reports so far. Because the artificial synthetic cBN wafers are very small and hard, the wafers cannot be cut into rectangular slabs. The polarizer-sample lambda/4 retardation plate (compensator)-analyzer (PSCA) transverse EO modulator has to be adjusted to the minute irregular octahedron of cBN wafers. When the applied voltage is along [1 1 1] direction of the wafer, due to refraction, the angle between the incident beam direction and the (1 1 1) plane (top or bottom plane) of the wafer should be 25.4 degrees, and the angle between the polarization direction of the polarizer and the plane of incidence should be 50.8 degrees by calculation, respectively. The half-wave voltage of the cBN sample was obtained for the first time, by means of detection of the output optic signals from the modulator with and without an applied electric field on the sample, respectively. Furthermore, the linear EO coefficient was obtained, gamma = 1.05 x 10(-14) m/V. The analysis of the experimental resulting error was carried out. (c) 2005 Elsevier Ltd. All rights reserved.
机译:立方氮化硼(cBN)是一种人造电光(EO)晶体,到目前为止,我们还没有发现任何相关报道。由于人造合成cBN晶片非常小且坚硬,因此无法将晶片切割成矩形平板。必须将偏振器-样品λ/ 4延迟板(补偿器)-分析仪(PSCA)横向EO调制器调整为cBN晶片的微小不规则八面体。当施加的电压沿着晶片的[1 1 1]方向时,由于折射,入射光束方向与晶片的(1 1 1)平面(顶部或底部平面)之间的角度应为25.4度,并且通过计算,偏振器的偏振方向与入射平面之间的角度应分别为50.8度。通过分别在有和没有在样品上施加电场的情况下检测来自调制器的输出光信号,首次获得了cBN样品的半波电压。此外,获得线性EO系数,γ= 1.05×10(-14)m / V。对实验结果误差进行了分析。 (c)2005 Elsevier Ltd.保留所有权利。

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