Performance of a low-loss pulsed-laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06 and 0.94 mu m

Bonner CL; Anderson AA; Eason RW; Shepherd DP; Gill DS; Grivas C; Vainos N; UNIV SOUTHAMPTON DEPT PHYS SOUTHAMPTON SO17 1BJ HANTS ENGLAND.

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Performance of a low-loss pulsed-laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06 and 0.94 mu m

机译：低损耗脉冲激光沉积Nd：Gd3Ga5O12波导激光器在1.06和0.94μm处的性能

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We report the laser performance of a low-propagation-loss neodymium-doped Gd3Ga5O12 (Nd:GGG) waveguide fabricated by pulsed-laser deposition. An 8-mu m-thick crystalline Nd:GGG film grown upon an undoped Y3Al5O12 substrate lases at 1.060 and 1.062 mu m when pumped by a Ti:sapphire laser operating at 740 or 808 nm. Using a 2.2% output coupler, we observed a 1060-nm laser threshold of 4 mW and a slope efficiency of 20%. Laser action was also achieved, for what we believe is the first time in Nd:GGG, on the quasi-three-level 937-nm transition. With a 2% output coupler at this wavelength a laser threshold of 17 mW and a 20% slope efficiency were obtained. This demonstration of low propagation loss combined with the fact that these waveguides have a very high numerical aperture (0.75) makes pulsed-laser-deposited thin films attractive for high-power diode-pumped devices. (C) 1997 Optical Society of America.

机译：我们报告了通过脉冲激光沉积制备的低传播损耗掺钕的Gd3Ga5O12（Nd：GGG）波导的激光性能。当通过在740或808 nm波长的Ti：蓝宝石激光器泵浦时，在未掺杂的Y3Al5O12衬底上生长的8微米厚的Nd：GGG晶体薄膜在1.060和1.062微米处激光发射。使用2.2％的输出耦合器，我们观察到1060 nm激光阈值为4 mW，斜率效率为20％。在准三级937 nm跃迁上，我们也首次实现了Nd：GGG的激光作用。使用在该波长下的2％输出耦合器，可获得17 mW的激光阈值和20％的斜率效率。低传播损耗的证明与这些波导具有很高的数值孔径（0.75）的事实相结合，使脉冲激光沉积薄膜吸引了大功率二极管泵浦器件。（C）1997年美国眼镜学会。

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《Optics Letters》 |1997年第13期|共3页
作者
Bonner CL; Anderson AA; Eason RW; Shepherd DP; Gill DS; Grivas C; Vainos N; UNIV SOUTHAMPTON DEPT PHYS SOUTHAMPTON SO17 1BJ HANTS ENGLAND.;
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正文语种 eng
中图分类光学;
关键词
WAVE-GUIDE LASER; THIN-FILM;

机译：波导激光;薄膜;

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1. Performance of a low-loss pulsed-laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06 and 0.94 mu m [J] . Bonner CL, Anderson AA, Eason RW, Optics Letters . 1997,第13期

机译：低损耗脉冲激光沉积Nd：Gd3Ga5O12波导激光器在1.06和0.94μm处的性能
2. Continuous-Wave Laser Oscillation at 1.06 mu m in Silicon Ion-Implanted Nd:YVO4 Planar Waveguide [J] . Du GL, Li GQ, Zhao SZ, Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application . 2010,第1期

机译：硅离子注入Nd：YVO4平面波导中1.06μm连续波激光振荡
3. Performance of CWNYAB laser at 1.06 mu m end-pumped by a high-power diode-laser-array [J] . Liu JH., Liu YG., Wei JQ., Optics & Laser Technology . 2000,第3期

机译：高功率二极管激光阵列在端泵浦的1.06μmCWNYAB激光器的性能
4. 1.54 #mu#m Emission of pulsed-laser deposited Er-doped films on Si [C] . S.Lanzerstorfer, J.D.Pedarnig, R.A.Gunasekaran, Symposium B on light emission from silicon : Progress towards Si-based optoelectronics of the E-MRS conference . 1999

机译：1.54 #MU＃M脉冲激光沉积的脉冲沉积的ER掺杂薄膜
5. Laser damage threshold studies of silver at 1.06 mu m. [D] . Zwan, Allen Duane. 1993

机译：银在1.06微米处的激光损伤阈值研究。
6. Low-Loss Coupling of Quantum Cascade Lasers into Hollow-Core Waveguides with Single-Mode Output in the 3.7–7.6 μm Spectral Range [O] . Pietro Patimisco, Angelo Sampaolo, Laura Mihai, 2016

机译：量子级联激光器到空心波导的低损耗耦合在3.7-7.6μm光谱范围内具有单模输出
7. Low-loss waveguides in ultrafast laser-deposited As(2)S(3) chalcogenide films [O] . Zakery A., Ruan Y., Rode A., 2003

机译：超快激光沉积as（2）s（3）硫属化物薄膜中的低损耗波导
8. Laser-Plasma Instabilities in Large Plasmas Irradiated at 1.06 mu M and the Wavelength Scaling of the Absorption, Hot-Electron Production, Ablation Pressure for 1.06-, 0.53-, and 0.35- mu M Light [R] . Phillion, D. W., Campbell, E. M., Turner, R. E. 1982

机译：大型等离子体中的激光等离子体不稳定性在1.06μm下照射，吸收，热电子产生，消融压力的波长缩放为1.06,0.53和0.35μm光

Performance of a low-loss pulsed-laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06 and 0.94 mu m

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