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首页> 外文期刊>CERAMICS INTERNATIONAL >Ultraviolet pulsed laser crystallization of Ba0.8Sr0.2TiO3 films on LaNiO3-coated silicon substrates
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Ultraviolet pulsed laser crystallization of Ba0.8Sr0.2TiO3 films on LaNiO3-coated silicon substrates

机译：LaNiO3涂层硅衬底上Ba0.8Sr0.2TiO3薄膜的紫外脉冲激光结晶

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摘要

In this work, Ba0.8Sr0.2TiO3 (BST) films on LaNiO3-buffered SiO2/Si (LNO/SiO2/Si) substrates were crystallized by pulsed laser irradiation. Solution-derived amorphous barium strontium titanate precursor layers were crystallized with a KrF excimer laser in oxygen ambient at fluences ranging from 50 to 75 mJ cm(-2). With the substrate temperature set to 500 degrees C, the number of pulses and film thickness were varied until high quality crystallinity could be achieved. It was found that films with a thickness of 40 rim are fully crystallized with a uniaxial {001} orientation which is predetermined by the LaNiO3 orientation. On the other hand, for 160 nm thick films, crystallization was observed after 12,000 pulses in the 70 nm close to the surface, while the rest of the film remained amorphous. The large temperature difference between the film surface and interface due to the low thermal conductivity of the amorphous BST is suggested as the origin of this behavior. Films thicker than 80 nm cracked on crystallization due to the stress caused by the different thermal expansion coefficients of film and substrate, as well as the large temperature variations within the BST film. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译：在这项工作中，在LaNiO3缓冲的SiO2 / Si（LNO / SiO2 / Si）衬底上的Ba0.8Sr0.2TiO3（BST）膜通过脉冲激光辐照而结晶。溶液衍生的非晶态钛酸锶锶钡前体层在氧气环境中用KrF受激准分子激光器以50到75 mJ cm（-2）的能量通量结晶。在将基板温度设置为500摄氏度的情况下，改变脉冲数和膜厚，直到获得高质量的结晶度为止。已经发现，厚度为40μm的膜以由LaNiO 3取向预定的单轴{001}取向完全结晶。另一方面，对于160 nm厚的薄膜，在靠近表面的70 nm中经过12,000个脉冲后，观察到结晶，而其余的薄膜仍保持非晶态。建议由于非晶态BST的低导热性而在薄膜表面和界面之间存在较大的温差，这是这种现象的根源。厚度大于80 nm的薄膜在结晶时会破裂，这是由于薄膜和基材的热膨胀系数不同以及BST薄膜内的温度变化大而引起的应力。 （C）2015 Elsevier Ltd和Techna Group S.r.l.版权所有。

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