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首页> 外文期刊>Scripta materialia >Highly selective diamond and β-SiC crystal formation at increased atomic hydrogen concentration: A route for synthesis of high-quality and patterned hybrid diamond/β-SiC composite film
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Highly selective diamond and β-SiC crystal formation at increased atomic hydrogen concentration: A route for synthesis of high-quality and patterned hybrid diamond/β-SiC composite film

机译:原子氢浓度增加时高选择性金刚石和β-SiC晶体的形成:合成高质量且有图案的杂化金刚石/β-SiC复合膜的途径

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摘要

Utilizing a high atomic hydrogen concentration, highly selective formation of micrometer-sized diamond and B-SiC crystals is achieved in a microwave plasma chemical vapour deposition process. The high atomic hydrogen concentration, generated by a high microwave power density, hinders secondary heterogeneous nucleation and therefore enhances the selectivity of CH_3 and SiH_3 deposition onto diamond and P-SiC crystals, respectively. Based on experimental observation, an H-induced selective growth model is proposed that explains the mechanisms.
机译:利用高原子氢浓度,可以在微波等离子体化学气相沉积工艺中选择性地形成微米级金刚石和B-SiC晶体。高微波功率密度产生的高原子氢浓度阻碍了二次异质成核,因此分别提高了CH_3和SiH_3沉积在金刚石和P-SiC晶体上的选择性。在实验观察的基础上,提出了一种H诱导的选择性生长模型来解释其机理。

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