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Thermoelastic switching with controlled actuation in VO_2 thin films

机译:VO_2薄膜中具有受控驱动的热弹性开关

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摘要

Reversible stress switching across the thermally triggered phase transition in vanadium dioxide thin films grown on silicon has been investigated using in situ wafer curvature measurements. Stability of the recoverable stress, hysteresis width and the transition temperature over 100 cycles are studied. Fine control over the recoverable stress has been demonstrated by thermal arrest across the phase boundary, exploiting the incomplete martensitic transition. Stability of the fractional stress changes across the martensitic transition is reported at various temperatures.
机译:已经使用原位晶片曲率测量研究了在硅上生长的二氧化钒薄膜中热触发相变过程中可逆应力转换。研究了100个循环内可恢复应力,磁滞宽度和转变温度的稳定性。利用不完全马氏体转变,通过跨相边界的热阻已经证明了对可恢复应力的精细控制。据报道,在各种温度下,马氏体转变过程中的分数应力变化的稳定性。

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