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Piezoresistive sensing with twin-beam structures in standard MEMS foundry processes

机译：标准MEMS铸造工艺中具有双梁结构的压阻传感

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摘要

A technique for fabrication of piezoresistive sensors in standard MEMS processes is introduced. The basic twin-beam structure comprises of a pair of beams from different structural layers and the structure is designed such that when one beam is under tension, the other one is under compression. If at least one of the beams is made of a piezoresistive material, it is possible to measure the change in the resistance of beams as a result of the applied stress by properly routing an electrical current through the structure. The proposed method does not require electrical isolation of piezoresistors from structural layers, and as confirmed by experiments, can be practically used for small deflections. Sample structures were fabricated in the MUMPs process and were employed to prove the validity of the design principle. Using the Maxwell-Mohr method, an analytic model is developed for the proposed structure and is verified by finite element simulations. Using modeling and experimental results, the piezoresistive coefficient of the top polysilicon layer in MUMP's process was calculated to be - 10.65 x 10(-11) Pa-1. Having the proper structure, its model, and the piezoresistive coefficient of the material, it is now possible to design and optimize a wide variety of piezoresistive sensors such as accelerometers and magnetic field sensors in low-cost standard MEMS processes. (c) 2006 Elsevier B.V. All rights reserved.
机译：介绍了一种在标准MEMS工艺中制造压阻传感器的技术。基本的双梁结构由来自不同结构层的一对梁组成，并且结构设计为使得当一个梁承受拉力时，另一根梁处于受压状态。如果梁中的至少一个由压阻材料制成，则可以通过适当地使电流通过结构来测量由于所施加的应力而导致的梁的电阻变化。所提出的方法不需要将压电电阻器与结构层电隔离，并且经实验证实，该方法实际上可用于小挠度。样品结构是在MUMPs过程中制造的，并被用来证明设计原理的有效性。使用麦克斯韦-莫尔（Maxwell-Mohr）方法，为所提出的结构开发了解析模型，并通过有限元仿真对其进行了验证。使用建模和实验结果，在MUMP的过程中，顶部多晶硅层的压阻系数计算为-10.65 x 10（-11）Pa-1。具有合适的结构，其模型和材料的压阻系数，现在可以在低成本的标准MEMS工艺中设计和优化各种压阻传感器，例如加速度计和磁场传感器。 （c）2006 Elsevier B.V.保留所有权利。

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