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Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures

机译:GaAs / GaAlAs和InGaAs / GaAs / GaAlAs结构中的阶梯式量子阱的发光

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摘要

Luminescence spectra of doped and undoped GaAs/GaAlAs and InGaAs/GaAs/GaAlAs structures containing several tens of stepped quantum wells (QW) are investigated. The emission bands related to free and bound excitons and impurity states are observed in QW spectra. The luminescence excitation spectra indicate that the relaxation of free excitons to the e1hh1 state proceeds via the exciton mechanism, whereas an independent relaxation of electrons and holes is specific to bound excitons and impurity states. The energy levels for electrons and holes in stepped QWs, calculated in terms of Kane's model, are compared with the data obtained from the luminescence excitation spectra. The analysis of the relative intensities of emission bands related to e1hh1 excitons and exciton states of higher energy shows that, as the optical excitation intensity increases, the e1hh1 transition is more readily saturated at higher temperature, because the lifetime of excitons increases. Under stronger excitation, the emission band of electron–hole plasma arises and increases in intensity superlinearly. At an excitation level of ~105 W/cm2, excitons are screened and the plasma emission band dominates in the QW emission. Nonequilibrium luminescence spectra obtained in a picosecond excitation and recording mode show that the e1hh1 and e2hh2 radiative transitions are 100% polarized in the plane of QWs.
机译:研究了掺杂和未掺杂的GaAs / GaAlAs和InGaAs / GaAs / GaAlAs结构的发光光谱,该结构包含数十个阶梯式量子阱(QW)。在QW光谱中观察到与自由和束缚激子和杂质态有关的发射带。发光激发光谱表明,自由激子向e1hh1态的弛豫是通过激子机理进行的,而电子和空穴的独立弛豫是特定于结合的激子和杂质态的。将根据凯恩模型计算出的阶梯式量子阱中电子和空穴的能级与从发光激发光谱获得的数据进行比较。对与e1hh1激子和较高能量的激子态有关的发射带的相对强度的分析表明,随着光激发强度的增加,e1hh1跃迁在更高的温度下更容易饱和,因为激子的寿命增加了。在更强的激发下,电子-空穴等离子体的发射带出现并强度超线性增加。在〜105 W / cm2的激发水平下,对激子进行筛选,等离子发射带在QW发射中占主导地位。在皮秒激发和记录模式下获得的非平衡发光光谱表明,e1hh1和e2hh2辐射跃迁在QWs平面中被100%极化。

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