Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method

Avrov DD; Dorozhkin SI; Tairov YM; Fadeev AY; Lebedev AO

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Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method

机译：通过改进的Lely方法生长的碳化硅锭中的碳夹杂物

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摘要

The problem of the appearance of carbon inclusions in single-crystal silicon carbide ingots grown by the modified Lely method (the so-called graphitization of the ingot) is analyzed. It is shown that the process of graphitization of the ingot is not related to a deficit of silicon in the growth cell; in contrast, it is excess of silicon at the growth surface that inhibits the ingot growth rate and gives rise to intense corrosion of the graphite fittings.

机译：分析了通过改进的Lely方法生长的单晶碳化硅锭中的碳夹杂物的出现问题（所谓的锭的石墨化）。结果表明，铸锭的石墨化过程与生长池中硅的缺乏无关。相反，在生长表面上过量的硅会抑制铸锭的生长速率并导致石墨配件的强烈腐蚀。

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《Semiconductors》 |2008年第13期|共6页
作者
Avrov DD; Dorozhkin SI; Tairov YM; Fadeev AY; Lebedev AO;
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正文语种 eng
中图分类半导体技术;
关键词
SUBLIMATION GROWTH; PVT GROWTH; GRAPHITIZATION; CRYSTALS;

机译：增生生长;PVT生长;石墨化;晶体;

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专利

1. Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method [J] . Avrov DD, Dorozhkin SI, Tairov YM, Semiconductors . 2008,第13期

机译：通过改进的Lely方法生长的碳化硅锭中的碳夹杂物
2. A general method for the calculation of segregation profiles in floating zone grown silicon ingots with non-uniform initial distribution of the solute [J] . Hans-Christof Freiheit, Kurt Bonauer-Klepp, Robert Baumann Journal of Crystal Growth . 2007,第2期

机译：计算溶质初始分布不均匀的浮区生长硅锭中偏析轮廓的一般方法
3. Photoelectric characteristics of silicon carbide-silicon structures grown by the atomic substitution method in a silicon crystal lattice [J] . Grashchenko A. S., Feoktistov N. A., Osipov A. V., Semiconductors . 2017,第5期

机译：硅晶格原子替代方法生长的碳化硅 - 硅结构的光电特性
4. Growth of silicon carbide ingots by the modified Lely method with 'in situ' sublimation etching [C] . International conference on silicon carbide and related materials . 1996

机译：通过“原位”升华蚀刻的改性纤维法生长碳化硅锭的生长
5. Carbon incorporation pathways and lattice site distributions in silicon carbide/silicon(001) and germanium carbide/germanium(001) alloys grown by molecular beam epitaxy. [D] . Park, Se-Yang. 2001

机译：通过分子束外延生长的碳化硅/硅（001）和碳化锗/锗（001）合金中的碳结合途径和晶格位点分布。
6. Influence of Ti3C2Tx MXene and Surface-Modified Ti3C2Tx MXene Addition on Microstructure and Mechanical Properties of Silicon Carbide Composites Sintered via Spark Plasma Sintering Method [O] . Mateusz Petrus, Jarosław Woźniak, Tomasz Cygan, 2021

机译：通过火花等离子体烧结法烧结碳化硅复合材料微观结构和机械性能的Ti3C2Tx mx12和表面改性Ti3C2Tx Mx的影响
7. Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon [O] . Dina I. Bakranova, Sergey A. Kukushkin, Kair Kh. Nussupov, 2016

机译：通过在高电阻率的表面上更换原子的新方法生长的外延碳化硅膜（111）取向硅

Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method

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