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首页> 外文期刊>Semiconductors >Transport in GaAs/Al (x) Ga1-x As superlattices with narrow forbidden minibands: Low-frequency negative differential conductivity and current oscillations
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Transport in GaAs/Al (x) Ga1-x As superlattices with narrow forbidden minibands: Low-frequency negative differential conductivity and current oscillations

机译：GaAs / Al（x）Ga1-x As的超窄禁带超晶格中的输运：低频负微分电导率和电流振荡

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摘要

Current-voltage characteristics have been measured and low-frequency current instabilities have been studied for GaAs/Al (x) Ga1-x As superlattices with narrow forbidden minibands. At relatively low electric fields, a saw-like structure for current-voltage characteristics with alternating portions of positive and negative differential conductivity and spontaneous generation of low-frequency current oscillations with a complex frequency spectrum (varying from discrete to continuous) are observed. It is shown that the observed specific features of electron transport are caused by the spatial-temporal dynamics of electric-field domains (dipoles and monopoles). The effects of the bifurcation, hysteresis, and multistability of current-voltage characteristics are also observed. At high fields, regular features are observed and identified in the current-voltage characteristics; these features are caused by resonance tunneling of electrons between the levels of the Wannier-Stark ladders belonging to quantum wells separated by several periods.
机译：测量了具有窄禁止微带的GaAs / Al（x）Ga1-x As超晶格的电流-电压特性，并研究了低频电流不稳定性。在相对较低的电场下，观察到锯齿状的电流-电压特性，具有正负差分电导率的交替部分，并自发产生具有复杂频谱（从离散到连续变化）的低频电流振荡。结果表明，观察到的电子传输的特定特征是由电场域（偶极和单极）的时空动力学引起的。还观察到分叉，磁滞和电流电压特性的多重稳定性的影响。在高磁场中，观察到并识别出电流-电压特性中的规则特征。这些特征是由于电子之间的共振隧道效应引起的，该电子位于属于几个周期分隔的量子阱的万尼尔-斯塔克阶梯之间。

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