Analysis of Spatial Modes in Half-Disk Lasers Based on AlGaAsSb/InGaAsSb Quantum Well Nanoheterostructures

Imenkov A.N.; Sherstnev V.V.; Grebenshchikova E.A.; Sipovskaya M.A.; Larchenkov M.I.; Tarasov D.I.; Baranov A.N.; Yakovlev Y.P.

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Analysis of Spatial Modes in Half-Disk Lasers Based on AlGaAsSb/InGaAsSb Quantum Well Nanoheterostructures

机译：基于AlGaAsSb / InGaAsSb量子阱纳米异质结构的半圆盘激光器的空间模态分析

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Spectral and spatial distributions of the emission of whispering-gallery-mode (WGM) lasers with a half-disk cavity have been studied. Up to 13 broad lobes with different intensities, subdivided into order-of-magnitude narrower lobes, are distinguished in the spatial distribution. The emission spectrum is nearly single-mode. A mathematical model of the electromagnetic field distribution in a WGM laser is suggested, and the radiation pattern of the laser is calculated. It is shown that each lobe corresponds to its own stable radial spatial mode. The highest emission intensity is provided not by the peripheral mode itself, but by the next-closest mode, which presumably exhibits the lowest optical loss. The predominance of a single spatial mode results in a nearly single-mode emission spectrum being observed.

机译：研究了带有半圆盘腔的耳语画廊模式（WGM）激光器发射的光谱和空间分布。在空间分布中可以区分出多达13个强度不同的宽瓣，细分为数量级的较窄瓣。发射光谱几乎是单模的。提出了WGM激光器中电磁场分布的数学模型，并计算了激光器的辐射方向图。结果表明，每个瓣对应于其自身稳定的径向空间模式。最高发射强度不是由外围模式本身提供的，而是由次近模式提供的，后者可能显示出最低的光学损耗。单一空间模式的优势导致观察到近乎单一模式的发射光谱。

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《Semiconductors》 |2011年第3期|共7页
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Imenkov A.N.; Sherstnev V.V.; Grebenshchikova E.A.; Sipovskaya M.A.; Larchenkov M.I.; Tarasov D.I.; Baranov A.N.; Yakovlev Y.P.;
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中图分类半导体物理学;
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1. Analysis of Spatial Modes in Half-Disk Lasers Based on AlGaAsSb/InGaAsSb Quantum Well Nanoheterostructures [J] . Imenkov A.N., Sherstnev V.V., Grebenshchikova E.A., Semiconductors . 2011,第3期

机译：基于AlGaAsSb / InGaAsSb量子阱纳米异质结构的半圆盘激光器的空间模态分析
2. The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots [J] . Kuzmenkov AG, Blokhin SA, Maleev NA, Semiconductors . 2007,第10期

机译：蚀刻孔的空间有序阵列在基于亚单层InGaAs量子点的单模垂直腔表面发射激光器制造中的应用
3. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes [J] . Gordeev N.Y., Novikov I.I., Kuznetsov A.M., Semiconductors . 2010,第10期

机译：基于InAs / InGaAs量子点和光学模式衍射滤光片的单空间模式半导体激光器
4. Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model [C] . F. Grillot, K. Veselinov, M. Gioannini, Conference on physics and simulation of optoelectronic devices XVII; 20090126-29; San Jose, CA(US) . 2009

机译：基于多种群速率方程模型的1.55-μmInAs / InP（113B）量子点激光器的理论分析
5. Frequency stabilization, tuning, and spatial mode control of terahertz quantum cascade lasers for coherent transceiver applications. [D] . Danylov, Andriy. 2010

机译：用于相干收发器应用的太赫兹量子级联激光器的频率稳定，调谐和空间模式控制。
6. Artificial Neuron Based on Integrated Semiconductor Quantum Dot Mode-Locked Lasers [O] . Charis Mesaritakis, Alexandros Kapsalis, Adonis Bogris, -1

机译：基于集成半导体量子点锁模激光器的人工神经元
7. Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model [O] . Grillot F., Veselinov K., Piron R., 2009

机译：基于多种群速率方程模型的1.55-μmInAs / InP（113B）量子点激光器的理论分析
8. Fabrication of Laterally Coupled Distributed Feedback Laser Structures by Two Step RIE in InGaAsSb-AlGaAsSb Material System Grown by MBE [R] . Sin, Y., Bicknell-Tassius, R., Muller, R., 2000

机译：mBE生长的InGaassb-alGaassb材料系统中两步RIE制备横向耦合分布反馈激光器结构

Analysis of Spatial Modes in Half-Disk Lasers Based on AlGaAsSb/InGaAsSb Quantum Well Nanoheterostructures

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