Effect of AlGaAs-(AlGa)_xO_y pedestal parameters on characteristics of a microdisk laser with active region basedon InAs/InGaAs quantum dots

Kryzhanovskaya N.V.; Blokhin S.A.; Maximov M.V.; Nadtochy A.M.; Zhukov A.E.; Fedorova K.V.; Ledentsov N.N.; Ustinov V.M.; Ilinskaya N.D.; Bimberg D.

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Effect of AlGaAs-(AlGa)_xO_y pedestal parameters on characteristics of a microdisk laser with active region basedon InAs/InGaAs quantum dots

机译：AlGaAs-（AlGa）_xO_y基座参数对基于InAs / InGaAs量子点的具有有源区的微盘激光器特性的影响

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Effect of parameters of the AlGaAs-(AlGa)_xO_y layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quantum dots on specific features of the emission spectrum at a temperature of 15 K under optical excitation has been studied. A decrease in the oxidation depth of the Al_(0.97)Ga_(0.03)As layer results in a decrease in the intensity of "whispering gallery mode" lines; simultaneously, the lasing threshold becomes higher and the Q factor is diminished by increased leakages into the substrate region.

机译：研究了在InGa / InGaAs量子点的基础上，形成具有有源区的微盘激光器基座的AlGaAs-（AlGa）_xO_y层的参数对光激发下15 K温度下发射光谱的特定特征的影响。 Al_（0.97）Ga_（0.03）As层的氧化深度的减小导致“回音壁模式”线的强度减小;同时，激射阈值变得更高，并且由于向衬底区域的泄漏增加而使Q因子减小。

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《Semiconductors》 |2011年第7期|共4页
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Kryzhanovskaya N.V.; Blokhin S.A.; Maximov M.V.; Nadtochy A.M.; Zhukov A.E.; Fedorova K.V.; Ledentsov N.N.; Ustinov V.M.; Ilinskaya N.D.; Bimberg D.;
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1. Effect of AlGaAs-(AlGa)_xO_y pedestal parameters on characteristics of a microdisk laser with active region basedon InAs/InGaAs quantum dots [J] . Kryzhanovskaya N.V., Blokhin S.A., Maximov M.V., Semiconductors . 2011,第7期

机译：AlGaAs-（AlGa）_xO_y基座参数对基于InAs / InGaAs量子点的具有有源区的微盘激光器特性的影响
2. Refractive index of laser active region based on InAs/InGaAs quantum dots [J] . Nikita Yu Gordeev, Oleg I. Rumyantsev, Ivan G. Savenko, Journal of Nanophotonics . 2013,第Null期

机译：基于InAs / InGaAs量子点的激光有源区的折射率
3. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots [J] . Kryzhanovskaya N.V., Zhukov A.E., Nadtochy A.M., Semiconductors . 2012,第8期

机译：具有基于InAs / InGaAs量子点的有源区的微环激光器中的高温激光
4. Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m [C] . Lott, J.A., Ledentsov, . 2000

机译：在GaAs衬底上具有InAs-InGaAs量子点有源区的垂直腔表面发射激光器，发射速率为1.3 / spl mu / m
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots [O] . Mikhail V Maximov, Natalia V Kryzhanovskaya, Alexey M Nadtochiy, 2014

机译：基于InAs / InGaAs / GaAs量子点的超小型微盘和微环激光器
7. Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots [O] . 2014

机译：基于InAs / InGaAs / GaAs量子点的超小型微盘和微环激光器
8. Radiative Characteristics of InAs/InGaAs/InP Quantum Dot Injection Lasers. [R] . Kopchatov, V. I., Zaitsev, S. V., Gordeev, N. Y., 1998

机译：Inas / InGaas / Inp量子点注入激光器的辐射特性。

Effect of AlGaAs-(AlGa)_xO_y pedestal parameters on characteristics of a microdisk laser with active region basedon InAs/InGaAs quantum dots

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