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首页> 外文期刊>Semiconductors >Conductivity Compensation in n-4H-SiC (CVD) under Irradiation with 0.9-MeV Electrons
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Conductivity Compensation in n-4H-SiC (CVD) under Irradiation with 0.9-MeV Electrons

机译：0.9 MeV电子辐照下n-4H-SiC（CVD）中的电导率补偿

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摘要

The effect of electron irradiation on n-4H-SiC is studied by the methods of capacitance–voltage characteristics and photoluminescence. The carrier-removal rate is found to be V_d ≈ 0.25 cm~(–1). Total conductivity compensation in samples with an initial carrier concentration of (1–2) × 10~(15) cm~(–2) is observed at irradiation doses of ~5 × 10~(15) cm~(–2). Simultaneously with an increase in the compensation, a rise in the intensity of defect-related luminescence characteristic of 4H-SiC is observed. The sample parameters before irradiation and after irradiation and annealing are compared. The physical mechanisms of compensation in the samples under study are analyzed.
机译：通过电容-电压特性和光致发光方法研究了电子辐照对n-4H-SiC的影响。发现载流子去除速率为V_d≈0.25 cm〜（–1）。在〜5×10〜（15）cm〜（-2）的辐照剂量下，观察到初始载流子浓度为（1-2）×10〜（15）cm〜（–2）的样品中的总电导率补偿。同时，随着补偿的增加，观察到4H-SiC的与缺陷有关的发光特性的强度增加。比较了辐照前，辐照和退火后的样品参数。分析了样品中补偿的物理机理。

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