Behavior of the Fe impurity in (HgInTe6)-In-3-Te-2 crystals

Grushka O. G.; Savchuk A. I.; Chupyra S. N.; Bilichuk S. V.

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Behavior of the Fe impurity in (HgInTe6)-In-3-Te-2 crystals

机译：Fe杂质在（HgInTe6）-In-3-Te-2晶体中的行为

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Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at E (c)-0.69 eV in (HgInTe6)-In-3-Te-2 crystals. When light is absorbed by Fe2+ impurity centers, both electronic transitions of the impurity-level-conduction-band type and optical transitions between ground and excited states of the aforementioned centers (intracenter transitions) are observed. Investigations of transport phenomena point to the acceptor properties of Fe2+ centers.

机译：光学和光电测量表明，在（HgInTe6）-In-3-Te-2晶体中，铁掺杂会在E（c）-0.69 eV处形成深能级。当光被Fe 2+杂质中心吸收时，同时观察到杂质能级导带型电子跃迁和上述中心的基态与激发态之间的光学跃迁（中心内跃迁）。对传输现象的研究指出了Fe2 +中心的受体性质。

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《Semiconductors》 |2015年第7期|共3页
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Grushka O. G.; Savchuk A. I.; Chupyra S. N.; Bilichuk S. V.;
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中图分类半导体物理学;
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Behavior of the Fe impurity in (HgInTe6)-In-3-Te-2 crystals

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