Results of investigating the static and dynamic conductivity of an InSe single crystal in the temperature range from 4.2 to 300 K are reported. The measurements were performed for a temperature-variation rate of 0.2-0.8 K/min and for currents through a sample of up to 10 μA. Under such conditions, new states can be formed as a result of phase transitions and the dimensionality of the gas of carriers changes. Charge-density waves arising in this case do not penetrate the crystal under the action of an electric field. A substantial difference was observed between the properties of InSe single crystal in the static and dynamic modes.
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机译：报告了在4.2至300 K的温度范围内研究InSe单晶的静态和动态电导率的结果。对于0.2-0.8 K / min的温度变化率和通过最大10μA的样品的电流进行测量。在这种条件下，由于相变而可能形成新的状态，并且载流子气体的尺寸会发生变化。在这种情况下产生的电荷密度波在电场的作用下不会穿透晶体。观察到InSe单晶在静态和动态模式下的性能之间存在显着差异。
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