Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

Drozdov M.N.; Novikov A.V.; Yurasov D.V.

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Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

机译：分子束外延生长应力硅锗异质结构中的锑偏析

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The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

机译：对于通过分子束外延生长的应力SiGe结构，通过实验研究了生长温度，组成和单独层中的弹性应变对锑偏析的影响。可以确定的是，生长条件和结构参数对Sb的偏析具有相互关系的影响：SiGe层中成分和弹性应力对Sb偏析的影响程度取决于生长温度。已经表明，考虑到所获得的Sb偏析对SiGe层的生长条件和参数的依赖性，我们先前提出的用于选择性掺杂硅结构的方法的使用使得可以形成选择性地掺杂有锑的SiGe结构。

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《Semiconductors》 |2013年第11期|共4页
作者
Drozdov M.N.; Novikov A.V.; Yurasov D.V.;
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正文语种 eng
中图分类半导体物理学;
关键词
Antimony; segregation; heterostructures;

机译：锑偏析异质结构;

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专利

1. Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy [J] . Drozdov M.N., Novikov A.V., Yurasov D.V. Semiconductors . 2013,第11期

机译：分子束外延生长应力硅锗异质结构中的锑偏析
2. Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters [J] . D.V. Yurasov, M.N. Drozdov, N.D. Zakharov, Journal of Crystal Growth . 2014,第juna15期

机译：分子束外延生长的SiGe异质结构中Sb的偏析：生长条件和结构参数的相互依赖
3. Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress [J] . Portavoce A, Gas P, Berbezier I, Journal of Applied Physics . 2004,第6期

机译：通过分子束外延生长SiGe异质结构过程中B的晶格扩散和表面偏析：Ge浓度和双轴应力的影响
4. Composition, photoelectric properties, and electroluminescence of the SiGe/Si heterostructures with self-assembled nanoclusters grown by molecular beam epitaxy with vapor Ge source [C] . M. V. Kruglova, G. A. Maximov, D. O. Filatov, International Conference on the Physics of Semiconductors . 2005

机译：用蒸汽射线源的分子束外延生长的自组装纳米能器的组成，光电性能和SiGe / Si异质结构的电致发光
5. Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy. [D] . Stanley, Irena Vidhya Mabel. 2003

机译：分子束外延生长铟在氮化铟镓中的离析动力学和镁在氮化镁镓中的离析动力学的理论研究。
6. Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy [O] . Kai Ding, Vitaliy Avrutin, Natalia Izioumskaia, 2018

机译：等离子体辅助分子束外延生长的Zn极性BeMgZnO / ZnO异质结构上肖特基二极管的制备
7. Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress. [O] . Portavoce A., Gas P., Berbezier I., 2004

机译：通过分子束外延生长SiGe异质结构过程中B的晶格扩散和表面偏析：Ge浓度和双轴应力的影响。
8. Uniformity and Crystalline Quality of CoSi2/Si Heterostructures Grown by Molecular Beam Epitaxy and Reactive Deposition Epitaxy [R] . Kao, Y. C., Tejwani, M., Xie, Y. H., 1985

机译：分子束外延和反应沉积外延生长Cosi2 / si异质结构的均匀性和结晶质量

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

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