Efficient electro-optic semiconductor medium based on type-II heterostructures

Shchukin V.A.; Ledentsov N.N.; Karachinsky L.Y.; Blokhin S.A.; Novikov I.I.; Bogoslovskiy N.A.; Savelyev A.V.

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Efficient electro-optic semiconductor medium based on type-II heterostructures

机译：基于II型异质结构的高效电光半导体介质

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An electro-optic medium based on the type-II semiconductor superlattice is proposed. Electrooptic modulation of the intensity of optical reflectance of the electro-optic medium integrated into a vertical Fabry-Perot cavity is studied by the optical-reflectance-spectroscopy method. The experimental data are approximated using an oscillator model of exciton absorption. The efficiency of the electro-optic medium in the case of detuning from the absorption peak by 50 meV in electric fields of 0-50 kV/cm is 10-9 m/V at a medium filling factor of 100%.

机译：提出了一种基于II型半导体超晶格的电光介质。通过光反射光谱法研究了集成到垂直法布里-珀罗腔中的电光介质的光反射强度的电光调制。使用激子吸收的振荡器模型来近似实验数据。在100％的介质填充率下，在0-50 kV / cm的电场中，电光介质的效率从吸收峰衰减50 meV时，效率为10-9 m / V。

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来源
《Semiconductors》 |2013年第11期|共11页
作者
Shchukin V.A.; Ledentsov N.N.; Karachinsky L.Y.; Blokhin S.A.; Novikov I.I.; Bogoslovskiy N.A.; Savelyev A.V.;
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正文语种 eng
中图分类半导体物理学;
关键词
Efficient; electro-optic; semiconductor;

机译：高效;电光;半导体;

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专利

1. Efficient electro-optic semiconductor medium based on type-II heterostructures [J] . Shchukin V.A., Ledentsov N.N., Karachinsky L.Y., Semiconductors . 2013,第11期

机译：基于II型异质结构的高效电光半导体介质
2. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In_0.17Al_0.83N/GaN heterostructures [J] . Jiaming Wang, Fujun Xu, Xia Zhang, Scientific reports. . 2014,第1期

机译：III型氮化物半导体中II型能带对准的证据：In _{0.17 Al _{0.83 N / GaN异质结构的实验和理论研究}}
3. Efficient charge separation based on type-II g-C3N4/TiO2-B nanowire/tube heterostructure photocatalysts [J] . Chen Hongmei, Xie Yinghao, Sun Xiaoqin, Dalton transactions: An international journal of inorganic chemistry . 2015,第29期

机译：基于II型g-C3N4 / TiO2-B纳米线/管异质结构光催化剂的高效电荷分离
4. Electronic Properties of Electron and Hole in Type-II Semiconductor Nano-Heterostructures [C] . K Suseel Rahul, C Souparnika, K Salini, International Conference on Condensed Matter and Applied Physics . 2016

机译：II型半导体纳米异质结构电子和孔的电子性质
5. Investigation of novel semiconductor heterostructure systems: I. Cerium oxide/silicon heterostructures II. 6.1 A semiconductor-based avalanche photodiodes. [D] . Preisler, Edward James. 2003

机译：新型半导体异质结构系统的研究：I.氧化铈/硅异质结构II。 6.1基于半导体的雪崩光电二极管。
6. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures [O] . Jiaming Wang, Fujun Xu, Xia Zhang, -1

机译：III型氮化物半导体中II型能带对准的证据：In0.17Al0.83N / GaN异质结构的实验和理论研究
7. Analytical approach for type-II semiconductor spherical core-shell quantum dots heterostructures with wide band gaps [O] . Cheche, Tiberius O., Chang, Yia-Chung 2013

机译：II型半导体球形核壳的分析方法具有宽带隙的量子点异质结构
8. Electro-Optic Materials Based Upon Inorganic Semiconductor Nanorod Liquid Crystals. [R] . Alivisatos, A. P. 2006

机译：基于无机半导体纳米棒液晶的电光材料。

Efficient electro-optic semiconductor medium based on type-II heterostructures

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