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Features of impurity photoconductivity in Si:Er/Si epitaxial diodes

机译：Si：Er / Si外延二极管中杂质光电导特性

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摘要

The photocurrent spectra of Si:Er/Si epitaxial diode structures are studied. It is shown that the nature of the sub-band-gap photoresponse is determined by the epitaxial growth temperature of the Si:Er layer and is not related to the composition of erbium emission centers. It is found that the absorption of light with photon energies lower than the energy-gap of silicon is determined by impurity-defect complexes that appear during the growth of the epitaxial layer and form a quasi-continuous spectrum of states in the energy gap of silicon. It is assumed that these impurity centers are not related to optically active erbium centers and are not involved in excitation-energy transfer to the rare-earth impurity.
机译：研究了Si：Er / Si外延二极管结构的光电流谱。结果表明，子带隙光响应的性质由Si：Er层的外延生长温度决定，与to发射中心的组成无关。已经发现，光子能量低于硅的能隙的光的吸收是由在外延层生长期间出现并在硅的能隙中形成准连续光谱的杂质-缺陷配合物决定的。 。假定这些杂质中心与旋光中心无关，并且不参与激发能量向稀土杂质的转移。

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