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首页> 外文期刊>Semiconductors >Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 μm
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Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 μm

机译：GaAsSb / InGaAs / GaAs基量子阱在1.0-1.2μm范围内发射的异质结构的光谱动力学性质

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摘要

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 μm are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak (～100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 μm. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.
机译：用皮秒和纳秒的时间分辨率研究了GaAs / GaAsSb基和GaAsSb / InGaAs / GaAs基量子阱在1.0-1.2μm范围内发射的异质结构的光谱动力学特性。观察到GaAsSb / InGaAs / GaAs结构中的强光致发光，以及光致发光波长增加了2.5倍，并且峰的最大位置（〜100 meV）移到了更长的波长区域。到室温。可以确定的是，与Sb含量较低且厚度较小的GaAsSb / InGaAs / GaAs结构相比，随着Sb的摩尔分数和InGaAs层厚度的增加，基态跃迁的能量将降低140 meV。 InGaAs层。在300 K下，这种结构的发射波长为1.18μm。此外，InGaAs层厚度的增加导致室温光致发光强度增加了60倍，这与InGaAs层中电子的基本态能量的降低有关，并且因此，导致更大的电子定位和较小的光致发光温度猝灭。

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