The spatial homogeneity of the photoresponse is studied for silicon photodiodes based on p-n and n-p junctions a year after their irradiation at a wavelength of 121. 6 nm and those based on n-p junctions four years after their irradiation with soft X-rays. It is demonstrated that silicon photodiodes based on p-n junctions exhibit a photoresponse recovery effect on being irradiated at a wavelength of 121. 6 nm. No recovery effect is observed for silicon photodiodes based on n-p structures.
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