Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

Pavlov D. A.; Bidus N. V.; Bobrov A. I.; Vikhrova O. V.; Volkova E. I.; Zvonkov B. N.; Malekhonova N. V.; Sorokin D. S.

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Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

机译：掺杂磷和铟等价杂质后，砷化镓中出现的弹性应变分布

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The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs (x) P1 - x layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.

机译：使用几何相位分析研究了由量子点层和掩埋的GaAs（x）P1-x层组成的系统中的弹性应变分布。提出了关于使用局部等价磷杂质控制GaAs基体中InAs量子点形成过程的可能性的假设。

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《Semiconductors》 |2015年第1期|共3页
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Pavlov D. A.; Bidus N. V.; Bobrov A. I.; Vikhrova O. V.; Volkova E. I.; Zvonkov B. N.; Malekhonova N. V.; Sorokin D. S.;
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1. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium [J] . Pavlov D. A., Bidus N. V., Bobrov A. I., Semiconductors . 2015,第1期

机译：掺杂磷和铟等价杂质后，砷化镓中出现的弹性应变分布
2. An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates [J] . F Shi, Kuo-Lih Chang, K C Hsieh Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems . 2007,第1期

机译：在砷化铟镓/磷化铟和砷化镓衬底上生长的自组装砷化铟纳米结构形成的有力研究
3. Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide. [J] . Tanaka A Toxicology and Applied Pharmacology . 2004,第3期

机译：砷化铟，砷化镓和铝砷化镓的毒性。
4. Elastic Strain Driven Change of Growth Mode in Indium Arsenide Heteroepitaxy on (001) Gallium Arsenide [C] . Anna A. Lyamkina, Dmitriy V. Dmitriev, Sergey P. Moshchenko, International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies . 2009

机译：（001）砷化镓铟砷杂藻酸铟中生长模式的弹性应变驱动变化
5. Strain induced physical phenomena in indium gallium arsenide/gallium arsenide and indium gallium nitride/gallium nitride heterostructures. [D] . Jiang, Hongtao Alfred. 1999

机译：砷化铟镓/砷化镓和氮化铟镓/氮化镓异质结构中的应变诱导物理现象。
6. Cobalt in hard metals and cobalt sulfate gallium arsenide indium phosphide and vanadium pentoxide. [O] . -1

机译：硬金属中的钴和硫酸钴砷化镓磷化铟和五氧化二钒。
7. Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm [O] . Johns Steven 1964- 1991

机译：砷化镓铟/铝铟砷化物和砷化镓铝铟砷/铝铟砷化物MQW器件在1.3μm的室温载流子寿命和光学非线性
8. Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium Arsenide, Indium Phosphide, Indium Arsenide, and Gallium Antimonide. [R] . Brennan, K. F. 1984

机译：砷化镓，磷化铟，砷化铟和锑化镓中电子和空穴高能迁移的理论研究。

Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

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